| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,740 pcs
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1740 pcs | On Request | 1 | On Request | On Request | N/A | On Request | On Request | |
|
445 pcs
|
445 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BFU610F,115 is an NPN wideband silicon RF transistor from NXP Semiconductors, designed for high-speed, low-noise applications. It offers a collector-emitter voltage of 5.5V, collector-base voltage of 16V, and emitter-base voltage of 2.5V. The transistor can handle a collector current of up to 10mA and dissipates a total power of 136mW. With a typical DC current gain of 135 at Ic=1mA, Vce=2V, and a transition frequency of 15GHz, it is suitable for RF amplification up to microwave frequencies. The device features a low noise figure of 1.7dB at 5.8GHz and a maximum power gain of 17dB at 5.8GHz. It is housed in a plastic, 4-pin dual-emitter SOT-343F surface-mount package, making it ideal for compact designs. Typical applications include low-noise amplifiers for microwave communications, cordless phones, GPS, Bluetooth, ZigBee, and other wireless systems. The transistor is RoHS compliant and has an MSL level of 1.
The collector-emitter voltage is 5.5V, collector-base voltage is 16V, and emitter-base voltage is 2.5V.
It comes in a surface-mount SOT-343F package.
The maximum junction temperature is 150°C.
It is listed as RoHS3 compliant, but this is unverified.
The typical transition frequency is 15 GHz.
The typical noise figure is 1.7 dB at 5.8 GHz.
The typical maximum power gain is 17 dB at 5.8 GHz.