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445 pcs
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445 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BFU610F from NXP Semiconductors is a single NPN RF Bipolar Transistor designed for high-frequency applications. It features a gain bandwidth product (Ft) of 15 GHz, a maximum collector-emitter voltage (VCEO) of 5.5V, and a continuous collector current of 10 mA. The transistor has a minimum DC collector/base gain (hFE) of 90 and a power dissipation of 136 mW.
This component is manufactured using Silicon (Si) technology and operates within a maximum temperature of 150°C. It is housed in a SOT-343F package and is suitable for surface-mount (SMD/SMT) applications. The BFU610F is configured as a single transistor.
Key electrical characteristics include an emitter-base voltage (VEBO) of 2.5V. The product is described as RoHS3 Compliant, with an MSL of 1 Unlimited, and REACH Unaffected status. It is supplied on a reel with a factory pack quantity of 3000 units.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The gain bandwidth product (Ft) for the BFU610F is 15 GHz.
The BFU610F can operate up to a maximum temperature of 150°C.
This RF Bipolar Transistor is supplied in a SOT-343F package.
The BFU610F is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for this component is 1 Unlimited.