BFU590QX BFU590QX is an NPN wideband silicon RF transistor from NXP Semiconductors. Rated for 12V Vce, 8GHz transition frequency, and 200mA collector current in a SOT89-3 surface mount package.
Mfr Part #:

BFU590QX

Available from 1 distributors
Mfr Name: NXP Semiconductors
NXP Semiconductors
BFU590QX is an NPN wideband silicon RF transistor from NXP Semiconductors. Rated for 12V Vce, 8GHz transition frequency, and 200mA collector current in a SOT89-3 surface mount package.
✓ Total Stock: 1,236 pcs
$ Price Range: $0.58 - $0.63

BFU590QX Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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1,236 pcs
1236 pcs On Request 1 On Request On Request On Request On Request On Request

BFU590QX Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Gain
Mounting Type
Operating Temperature
Power
Supplier Device Package
Transistor Type
Voltage

BFU590QX Description

Short technical summary and product information.

The BFU590QX is an NPN wideband silicon RF transistor from NXP Semiconductors, part of the BFU5 family of transistors designed for high speed, medium power applications up to 2 GHz. It features a maximum collector-emitter voltage of 12 V, a maximum collector current of 200 mA, and a typical transition frequency of 8 GHz at Ic=80 mA and Vce=8 V. The device delivers a typical maximum stable gain of 11 dB and output power at 1 dB compression of 22 dBm at 900 MHz.

 

This transistor is AEC-Q101 qualified for automotive applications and is suitable for use in broadband amplifiers, medium power amplifiers (e.g., 500 mW at 433 MHz), and large signal amplifiers for ISM band applications. It is housed in a 3-pin TO-243AA (SOT89-3) surface mount package and can dissipate up to 2000 mW total power. The operating junction temperature range is -40°C to 150°C.

BFU590QX Quick Information

Product Type: RF Transistor
Series: BFU590Q
Canonical Name: BFU590QX NPN Wideband Silicon RF Transistor
Subcategory: Wideband RF Transistor

BFU590QX Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BFU590QX Estimated Pricing

Qty Low High
1,000+ $0.63 $0.63
2,000+ $0.61 $0.61
3,000+ $0.60 $0.60
5,000+ $0.59 $0.59
7,000+ $0.58 $0.58
10,000+ $0.58 $0.58

Estimated market price range - modelled values for guidance only, not live distributor offers.

BFU590QX Features

  • NPN wideband silicon RF transistor.
  • 8 GHz transition frequency (ft).
  • Maximum stable gain 11 dB at 900 MHz.
  • 22 dBm output power at 1 dB compression.
  • AEC-Q101 qualified for automotive use.

BFU590QX Applications

  • Automotive RF amplifier circuits.
  • Broadband amplifier stages.
  • Medium power amplifiers at 433 MHz.
  • Large signal ISM band amplifiers.

BFU590QX FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of BFU590QX?

Maximum Vce is 12 V (open base).

What is the transition frequency of BFU590QX?

Typical transition frequency (ft) is 8 GHz at Ic=80 mA, Vce=8 V.

What package is BFU590QX available in?

It comes in a TO-243AA (SOT89-3) surface mount package.

Is BFU590QX RoHS compliant?

RoHS status is reported as RoHS3 Compliant, but unverified.

What is the operating temperature range of BFU590QX?

Operating junction temperature range is -40°C to 150°C.

What is the typical gain of BFU590QX at 900 MHz?

Typical maximum stable gain is 11 dB at 900 MHz (Ic=80 mA, Vce=8 V).

Is BFU590QX qualified for automotive applications?

Yes, it is AEC-Q101 qualified per the datasheet.

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