BFU590GX The BFU590GX is an NPN wideband silicon RF transistor from NXP Semiconductors. It features a 12V VCEO, 8.5GHz transition frequency, 200mA collector current, and 2W power dissipation in a surface-mount SOT223 package.
Mfr Part #:

BFU590GX

Available from 2 distributors
Mfr Name: NXP Semiconductors
NXP Semiconductors
The BFU590GX is an NPN wideband silicon RF transistor from NXP Semiconductors. It features a 12V VCEO, 8.5GHz transition frequency, 200mA collector current, and 2W power dissipation in a surface-mount SOT223 package.
✓ Total Stock: 1,096 pcs
$ Price Range: $1.33

BFU590GX Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,081 pcs
1081 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
15 pcs
15 pcs On Request 1 On Request On Request On Request On Request On Request

BFU590GX Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Gain
Mounting Type
Operating Temperature
Power
Storage Temperature
Supplier Device Package
Transistor Type
Voltage

BFU590GX Description

Short technical summary and product information.

The BFU590GX is an NPN wideband silicon RF transistor designed for high-speed, medium-power applications up to 2 GHz. It is part of the BFU5 family of transistors and is AEC-Q101 qualified for automotive use.

 

Key electrical specifications include a maximum collector-emitter voltage of 12V (open base) or 24V (shorted base), a maximum collector current of 200mA, and a power dissipation of 2W at a solder point temperature of 90°C. The transistor offers a typical DC current gain (hFE) of 95 at 80mA and 8V, a transition frequency (fT) of 8.5 GHz, and a typical maximum power gain of 13 dB at 900 MHz. The typical output power at 1dB gain compression is 21.5 dBm at 900 MHz.

 

The BFU590GX is housed in a surface-mount SOT223 package (also known as SC-73 or TO-261-4), making it suitable for automated assembly. It is designed for broadband amplifiers, medium power amplifiers, and large signal amplifiers for ISM applications.

BFU590GX Quick Information

Product Type: RF Bipolar Junction Transistor
Series: BFU5
Canonical Name: BFU590GX NPN Wideband Silicon RF Transistor
Subcategory: Wideband Silicon RF Transistor

BFU590GX Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected

BFU590GX Estimated Pricing

Qty Low High
1+ $1.33 $1.33

Estimated market price range - modelled values for guidance only, not live distributor offers.

BFU590GX Features

  • NPN wideband silicon RF transistor.
  • 8.5 GHz transition frequency (fT).
  • 13 dB typical gain at 900 MHz.
  • 21.5 dBm output power at 1dB compression.
  • AEC-Q101 qualified for automotive applications.

BFU590GX Applications

  • Ideal for broadband RF amplifiers.
  • Used in medium power amplifier stages.
  • Suitable for automotive electronic modules.
  • Designed for ISM band large signal amplifiers.

BFU590GX FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage (VCEO) of the BFU590GX?

The maximum collector-emitter voltage with the base open (VCEO) is 12 V. With the base shorted, the maximum is 24 V.

What is the package type for the BFU590GX?

The BFU590GX is offered in a surface-mount SOT223 package, also known as SC-73 or TO-261-4.

What is the operating temperature range for the BFU590GX?

The junction operating temperature range is -40°C to 150°C.

Is the BFU590GX RoHS compliant?

The BFU590GX is listed as RoHS3 Compliant, though this is unverified from the datasheet.

What is the transition frequency (fT) of the BFU590GX?

The typical transition frequency (fT) is 8.5 GHz, measured at Ic=80mA and Vce=8V.

What is the maximum collector current (IC) for the BFU590GX?

The maximum collector current (IC) is 200 mA.

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