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BFU550XAR NPN silicon RF transistor for high-speed, low-noise applications up to 2 GHz. Features 11GHz transition frequency and 0.75dB noise figure.
Mfr Part #:

BFU550XAR

Available from 2 distributors
Mfr Name: NXP Semiconductors
NXP Semiconductors
NPN silicon RF transistor for high-speed, low-noise applications up to 2 GHz. Features 11GHz transition frequency and 0.75dB noise figure.
✓ Total Stock: 3,273 pcs
$ Price Range: $0.53

BFU550XAR Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Fe Components ✓
Non-Authorised Inventory information
3,000 pcs
On Request
3000 pcs On Request 1 On Request On Request On Request On Request On Request
MW.FEP S.p.A. ✓
Non-Authorised Inventory information
273 pcs
On Request
273 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

BFU550XAR Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Gain
Mounting Type
Noise Figure (dB Typ @ f)
Operating Temperature
Power
Storage Temperature
Supplier Device Package
Termination Style
Transistor Type
Voltage
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BFU550XAR Description

Short technical summary and product information.

The BFU550XAR is an NPN silicon RF transistor from NXP Semiconductors, part of the BFU5 family. It is designed for high-speed, low-noise applications up to 2 GHz. The transistor is housed in a plastic, 4-pin dual-emitter SOT143B surface mount package.

 

Key electrical specifications include a collector-emitter breakdown voltage (VCEO) of 12V, a collector current of 50mA, and a DC current gain (hFE) range of 60 to 200. The transistor offers a transition frequency (fT) of 11 GHz, a typical noise figure of 0.75 dB at 900 MHz, and a maximum stable gain of 21.5 dB at 900 MHz. Output power at 1 dB compression is 13.5 dBm.

 

The device is AEC-Q101 qualified for automotive applications and has a total power dissipation of 450 mW. The SOT143B package enables surface mount assembly with a gull wing termination style. The transistor is suitable for broadband amplifiers, low noise amplifiers for ISM band applications, and oscillators.

BFU550XAR Quick Information

Product Type: RF Transistor
Series: BFU5
Canonical Name: NXP BFU550XAR NPN RF Transistor
Subcategory: Bipolar Junction Transistor (BJT)

BFU550XAR Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected

BFU550XAR Estimated Pricing

Qty Low High
1+ $0.53 $0.53

Estimated market price range - modelled values for guidance only, not live distributor offers.

BFU550XAR Features

  • 11GHz transition frequency (fT).
  • 0.75dB noise figure at 900MHz.
  • 21.5dB maximum stable gain.
  • AEC-Q101 qualified for automotive.
  • Surface mount SOT143B package.

BFU550XAR Applications

  • Suitable for broadband amplifiers up to 2 GHz.
  • Used in low noise amplifiers for ISM applications.
  • Ideal for ISM band oscillators.
  • High supply voltage and breakdown voltage applications.

BFU550XAR FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage of the BFU550XAR?

12V (VCEO).

What package does the BFU550XAR come in?

Surface mount SOT-143B (TO-253-4, TO-253AA).

What is the operating temperature range of BFU550XAR?

-40°C to 150°C (junction).

Is the BFU550XAR RoHS compliant?

Listed as RoHS3 Compliant (unverified).

What is the transition frequency of BFU550XAR?

11GHz at Ic=25mA, Vce=8V.

What is the noise figure of the BFU550XAR?

0.75dB at 900MHz.

What is the maximum power gain of BFU550XAR?

21.5dB at 900MHz.

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