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BFU550WX NXP BFU550WX is an NPN wideband silicon RF transistor for high-speed, low-noise applications up to 2 GHz. Key specs include 12V VCEO, 50mA collector current, 11GHz transition frequency, and 0.6dB minimum noise figure.
Mfr Part #:

BFU550WX

Available from 2 distributors
Mfr Name: NXP Semiconductors
NXP Semiconductors
NXP BFU550WX is an NPN wideband silicon RF transistor for high-speed, low-noise applications up to 2 GHz. Key specs include 12V VCEO, 50mA collector current, 11GHz transition frequency, and 0.6dB minimum noise figure.
✓ Total Stock: 7,498 pcs

BFU550WX Available from 2 distributors

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Fe Components ✓
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7,388 pcs
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7388 pcs On Request 1 On Request On Request On Request On Request On Request
Optech Co.,Limited ✓
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110 pcs
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110 pcs On Request 1 On Request On Request On Request On Request On Request
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BFU550WX Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Gain
Mounting Type
Noise Figure (dB Typ @ f)
Number of Pins
Operating Temperature
Power
Storage Temperature
Supplier Device Package
Transistor Type
Voltage
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BFU550WX Description

Short technical summary and product information.

The NXP BFU550WX is an NPN wideband silicon RF transistor designed for high-speed, low-noise applications up to 2 GHz. It is part of the BFU5 family and is suitable for small signal to medium power applications.

 

Key electrical characteristics include a maximum collector-emitter voltage of 12V, a maximum collector current of 50mA, and a total power dissipation of 450mW. The device features a typical transition frequency of 11GHz and a typical maximum stable gain of 18dB at 900MHz. The minimum noise figure is 0.6dB at 900MHz, and the typical output power at 1dB compression is 13.5dBm.

 

The BFU550WX is housed in a plastic, 3-pin SOT323 (SC-70) package for surface mount assembly. It is AEC-Q101 qualified and operates over a junction temperature range of -40°C to 150°C.

BFU550WX Quick Information

Product Type: RF Bipolar Junction Transistor
Canonical Name: NXP BFU550WX NPN Wideband Silicon RF Transistor
Subcategory: Wideband Silicon RF Transistor

BFU550WX Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: Non-Compliant

BFU550WX Features

  • NPN wideband silicon RF transistor.
  • 11 GHz transition frequency (ft).
  • 0.6 dB minimum noise figure at 900 MHz.
  • 18 dB maximum stable gain at 900 MHz.
  • AEC-Q101 qualified for automotive use.

BFU550WX Applications

  • Low noise amplifiers for ISM applications.
  • Broadband amplifiers up to 2 GHz.
  • ISM band oscillator circuits.
  • High supply voltage RF applications.

BFU550WX FAQs

6 frequently asked questions generated from this part’s specifications.
What is the package type of the BFU550WX?

The BFU550WX is available in a SC-70, SOT-323 surface mount package.

What is the operating temperature range of the BFU550WX?

The operating junction temperature range is -40°C to 150°C.

Is the BFU550WX RoHS compliant?

The BFU550WX is reported as RoHS3 compliant, but this information is unverified.

What is the maximum collector current of the BFU550WX?

The maximum collector current is 50 mA.

What is the transition frequency of the BFU550WX?

The typical transition frequency is 11 GHz.

What is the minimum noise figure of the BFU550WX?

The minimum noise figure is 0.6 dB at 900 MHz.

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