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BFU550R The BFU550R is an NPN wideband silicon RF transistor from NXP Semiconductors. It features 12V Vceo, 11GHz ft, 21dB gain, and 0.7dB noise figure in a SOT143B surface mount package.
Mfr Part #:

BFU550R

Available from 2 distributors
Mfr Name: NXP Semiconductors
NXP Semiconductors
The BFU550R is an NPN wideband silicon RF transistor from NXP Semiconductors. It features 12V Vceo, 11GHz ft, 21dB gain, and 0.7dB noise figure in a SOT143B surface mount package.
✓ Total Stock: 6,000 pcs
$ Price Range: $0.31 - $0.64

BFU550R Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Fe Components ✓
Non-Authorised Inventory information
3,000 pcs
On Request
3000 pcs On Request 1 On Request On Request On Request On Request On Request
Smaxon Electronics ✓
Non-Authorised Inventory information
3,000 pcs
On Request
3000 pcs On Request 1 On Request On Request 20+ On Request On Request
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BFU550R Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Gain
Mounting Type
Noise Figure (dB Typ @ f)
Operating Temperature
Power
Storage Temperature
Supplier Device Package
Transistor Type
Voltage
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BFU550R Description

Short technical summary and product information.

The BFU550R is an NPN wideband silicon RF transistor from NXP Semiconductors, designed for high speed and low noise applications up to 2 GHz. It is part of the BFU5 family and is AEC-Q101 qualified. Key electrical characteristics include a collector-emitter breakdown voltage (Vceo) of 12 V, collector-base breakdown voltage (Vcbo) of 24 V, and emitter-base breakdown voltage (Vebo) of 2 V. The maximum collector current is 50 mA, and total power dissipation is 450 mW at a solder point temperature of 87 °C. The transistor offers a transition frequency (ft) of 11 GHz, maximum stable gain of 21 dB, and a minimum noise figure of 0.7 dB, all measured at 900 MHz. DC current gain (hFE) is 60 minimum at 15 mA and 8 V. Collector capacitance is 0.72 pF typical, and output power at 1 dB compression is 13.5 dBm typical. The device is housed in a plastic SOT143B surface mount package with dual emitter pins for improved RF performance. Typical applications include broadband amplifiers, low noise amplifiers for ISM bands, and oscillators.

BFU550R Quick Information

Product Type: RF Bipolar Junction Transistor (BJT)
Canonical Name: BFU550R NPN Wideband Silicon RF Transistor
Subcategory: Wideband RF Transistor

BFU550R Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected

BFU550R Estimated Pricing

Qty Low High
1+ $0.64 $0.64
10+ $0.45 $0.45
25+ $0.40 $0.40
100+ $0.35 $0.35
250+ $0.33 $0.33
500+ $0.31 $0.31

Estimated market price range - modelled values for guidance only, not live distributor offers.

BFU550R Features

  • 11 GHz transition frequency for RF applications.
  • 0.7 dB noise figure at 900 MHz.
  • 21 dB maximum stable gain at 900 MHz.
  • AEC-Q101 qualified for automotive use.
  • Surface mount SOT143B package.

BFU550R Applications

  • Ideal for low noise RF amplifiers.
  • Suitable for broadband amplifiers up to 2 GHz.
  • Used in ISM band oscillator circuits.
  • Applicable in high voltage RF designs.

BFU550R FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating voltage of the BFU550R?

The collector-emitter breakdown voltage (Vceo) is 12 V minimum, collector-base breakdown voltage (Vcbo) is 24 V minimum, and emitter-base breakdown voltage (Vebo) is 2 V minimum.

What package does the BFU550R come in?

The BFU550R is available in a SOT143B surface mount package (TO-253-4, TO-253AA case).

What is the operating temperature range?

The operating temperature range is -40°C to 150°C (junction temperature).

Is the BFU550R RoHS compliant?

The RoHS status is listed as RoHS3 Compliant, but this is unverified and should be confirmed with the manufacturer.

What is the transition frequency of the BFU550R?

The transition frequency (ft) is 11 GHz typical at Ic=25mA, Vce=8V, f=900MHz.

What is the noise figure of the BFU550R?

The minimum noise figure is 0.7 dB typical at 900 MHz (Ic=1mA, Vce=8V).

What is the maximum collector current?

The maximum collector current (Ic) is 50 mA.

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