BFU550AR BFU550AR is an NPN wideband silicon RF transistor from NXP Semiconductors. It features a 12V collector-emitter breakdown voltage, 11GHz transition frequency, and 0.6dB noise figure, in a surface-mount SOT-23 package.
Mfr Part #:

BFU550AR

Available from 1 distributors
Mfr Name: NXP Semiconductors
NXP Semiconductors
BFU550AR is an NPN wideband silicon RF transistor from NXP Semiconductors. It features a 12V collector-emitter breakdown voltage, 11GHz transition frequency, and 0.6dB noise figure, in a surface-mount SOT-23 package.
✓ Total Stock: 6,000 pcs
$ Price Range: $0.10 - $0.26

BFU550AR Available from 1 distributor

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✓ Non-Authorised
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6,000 pcs
6000 pcs On Request 1 On Request On Request On Request On Request On Request

BFU550AR Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Gain
Lead Style
Mounting Type
Noise Figure (dB Typ @ f)
Operating Temperature
Power
Storage Temperature
Supplier Device Package
Transistor Type
Voltage

BFU550AR Description

Short technical summary and product information.

The BFU550AR is an NPN wideband silicon RF transistor from NXP Semiconductors, part of the BFU5 family. It is designed for high-speed, low-noise applications up to 2 GHz, including broadband amplifiers, low-noise amplifiers, and ISM band oscillators. The transistor is AEC-Q101 qualified for automotive applications.

 

Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 12 V, collector-base voltage (VCBO) of 24 V, and emitter-base voltage (VEBO) of 2 V. The maximum collector current is 50 mA, and total power dissipation is 450 mW at a solder point temperature ≤87°C. DC current gain (hFE) ranges from 60 to 200 with a typical value of 95 at Ic=15 mA, Vce=8 V.

 

RF performance is characterized by a transition frequency (fT) of 11 GHz typical, a minimum noise figure (NF) of 0.6 dB at 900 MHz, maximum stable gain (Gp(max)) of 18 dB at 900 MHz, and output power at 1 dB compression (P1dB) of 13.5 dBm typical. Collector capacitance is 0.74 pF typical.

 

The transistor is supplied in a surface-mount SOT-23 package (TO-236AB), suitable for high-density PCB assembly. The operating junction temperature range is -40°C to 150°C. The part is RoHS3 compliant and has MSL 1 (unlimited) moisture sensitivity.

BFU550AR Quick Information

Product Type: RF Transistor
Series: BFU550A
Canonical Name: BFU550AR NPN Wideband Silicon RF Transistor
Subcategory: RF Transistor

BFU550AR Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BFU550AR Estimated Pricing

Qty Low High
1+ $0.26 $0.26
3,000+ $0.11 $0.11
6,000+ $0.10 $0.10
9,000+ $0.10 $0.10
15,000+ $0.10 $0.10
21,000+ $0.10 $0.10
30,000+ $0.10 $0.10

Estimated market price range - modelled values for guidance only, not live distributor offers.

BFU550AR Features

  • NPN silicon RF transistor with 11GHz fT.
  • 0.6dB typical noise figure at 900MHz.
  • 18dB maximum stable gain at 900MHz.
  • 450mW power dissipation in SOT-23 package.
  • AEC-Q101 qualified for automotive applications.

BFU550AR Applications

  • Broadband amplifiers up to 2 GHz.
  • Low-noise amplifiers for ISM applications.
  • ISM band oscillators.
  • High supply voltage RF stages.

BFU550AR FAQs

7 frequently asked questions generated from this part’s specifications.
What are the breakdown voltages of the BFU550AR?

Maximum collector-emitter voltage (VCEO) is 12V, collector-base (VCBO) is 24V, and emitter-base (VEBO) is 2V.

What is the package type?

The BFU550AR is available in a surface-mount SOT-23 package (TO-236AB, also known as TO-236-3 or SC-59).

What is the operating temperature range?

The junction temperature range is -40°C to 150°C.

Is the BFU550AR RoHS compliant?

Yes, it is listed as RoHS3 Compliant, though this status is unverified.

What is the transition frequency (fT)?

11 GHz typical.

What is the typical noise figure?

0.6 dB at 900 MHz.

What is the maximum collector current?

50 mA.

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