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BFU530XAR BFU530XAR is an NPN wideband silicon RF transistor from NXP Semiconductors. Features 12V Vceo, 11GHz transition frequency, 0.7dB noise figure, and 450mW power dissipation in a SOT143B surface mount package.
Mfr Part #:

BFU530XAR

Available from 1 distributors
Mfr Name: NXP Semiconductors
NXP Semiconductors
BFU530XAR is an NPN wideband silicon RF transistor from NXP Semiconductors. Features 12V Vceo, 11GHz transition frequency, 0.7dB noise figure, and 450mW power dissipation in a SOT143B surface mount package.
✓ Total Stock: 78,000 pcs

BFU530XAR Available from 1 distributor

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BFU530XAR Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Gain
Industrial Grade
Lead Style
Mounting Type
Noise Figure (dB Typ @ f)
Operating Temperature
Power
SVHC Present
Storage Temperature
Supplier Device Package
Tape & Reel
Transistor Type
Voltage
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BFU530XAR Description

Short technical summary and product information.

The BFU530XAR is an NPN silicon RF transistor designed for high speed, low noise applications up to 2 GHz. It is part of the BFU5 family and is housed in a plastic 4-pin dual-emitter SOT143B surface mount package.

 

Key electrical characteristics include a collector-emitter breakdown voltage of 12V, collector current of 40 mA, and a DC current gain (hFE) range of 60 to 200 at 10mA, 8V. The transistor offers a transition frequency of 11 GHz, maximum power gain of 22 dB, and a low noise figure of 0.7 dB at 900 MHz. Output power at 1dB compression is 10 dBm typical.

 

The device is suitable for broadband amplifiers, low noise amplifiers for ISM applications, and oscillators. It is AEC-Q101 qualified. The operating junction temperature range is -40°C to 150°C.

BFU530XAR Quick Information

Product Type: NPN RF Transistor
Series: BFU530X
Canonical Name: BFU530XAR NPN wideband silicon RF transistor
Subcategory: NPN Wideband RF Transistor

BFU530XAR Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Yes

BFU530XAR Features

  • NPN wideband silicon RF transistor.
  • 11 GHz transition frequency typical.
  • 0.7 dB noise figure at 900 MHz.
  • Surface mount SOT143B package.
  • AEC-Q101 qualified for automotive.

BFU530XAR Applications

  • Low noise amplifiers for ISM bands.
  • Broadband amplifiers up to 2 GHz.
  • ISM band oscillator circuits.
  • High supply voltage RF applications.

BFU530XAR FAQs

7 frequently asked questions generated from this part’s specifications.
What is the transistor type of BFU530XAR?

NPN

What is the collector-emitter breakdown voltage (Vceo)?

12 V

What is the transition frequency (ft)?

11 GHz typical at Ic=15mA, Vce=8V, f=900MHz

What is the package type?

TO-253-4, TO-253AA; supplier package SOT-143B, surface mount

What is the operating temperature range?

-40°C to 150°C (junction temperature)

What is the typical noise figure?

0.7 dB at 900 MHz

Is the BFU530XAR RoHS compliant?

RoHS3 Compliant (unverified)

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