| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
979 pcs
|
979 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Gain | |
| Mounting Type | |
| Noise Figure (dB Typ @ f) | |
| Number of Pins | |
| Operating Temperature | |
| Power | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Voltage |
The BFU530WX is an NPN wideband silicon RF transistor designed for high-speed, low-noise applications up to 2 GHz. It features a maximum collector-emitter voltage of 12V and a collector current of 40mA, with a transition frequency of 11 GHz. The device offers a typical noise figure of 0.6 dB at 900 MHz and a maximum power gain of 18.5 dB, making it suitable for low-noise amplifiers and broadband circuits.
This transistor is AEC-Q101 qualified and comes in a surface-mount SOT323 package with three pins. It is part of the BFU5 family and is ideal for applications requiring high supply voltages and high breakdown voltages, such as ISM band oscillators and broadband amplifiers.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.55 | $0.55 |
| 10+ | $0.39 | $0.39 |
| 25+ | $0.35 | $0.35 |
| 100+ | $0.30 | $0.30 |
| 250+ | $0.28 | $0.28 |
| 500+ | $0.27 | $0.27 |
| 1,000+ | $0.26 | $0.26 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (Vceo) is 12V with open base.
The transition frequency (ft) is typically 11 GHz at Ic=15mA and Vce=8V.
The BFU530WX is available in a surface-mount SOT323 (SC-70) package with 3 pins.
The operating temperature range is -40°C to 150°C (junction temperature).
The BFU530WX is listed as RoHS3 compliant, but this status is unverified.