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BFU530WF The BFU530WF is an NPN wideband silicon RF transistor from NXP Semiconductors. It features 12V collector-emitter voltage, 40mA collector current, and 11GHz transition frequency in a SOT323 package.
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BFU530WF

Available from 1 distributors
Mfr Name: NXP Semiconductors
NXP Semiconductors
The BFU530WF is an NPN wideband silicon RF transistor from NXP Semiconductors. It features 12V collector-emitter voltage, 40mA collector current, and 11GHz transition frequency in a SOT323 package.
✓ Total Stock: 100,000 pcs

BFU530WF Available from 1 distributor

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BFU530WF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Gain
Mounting Type
Noise Figure (dB Typ @ f)
Operating Temperature
Power
Storage Temperature
Supplier Device Package
Transistor Type
Voltage
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BFU530WF Description

Short technical summary and product information.

The BFU530WF from NXP Semiconductors is an NPN wideband silicon RF transistor designed for high-speed, low-noise applications. It is part of the BFU5 family, suitable for small signal to medium power applications up to 2 GHz. The device is AEC-Q101 qualified, making it suitable for automotive applications.

 

Key electrical characteristics include a collector-emitter breakdown voltage of 12V, collector-base breakdown voltage of 24V, and emitter-base breakdown voltage of 2V. The collector current is rated at 40mA, with a total power dissipation of 450mW. The transition frequency is 11GHz, and the minimum noise figure is 0.6 dB at 900MHz, with a maximum power gain of 18.5 dB at 900MHz. The DC current gain is at least 60 at Ic=10mA and Vce=8V.

 

The BFU530WF is housed in a surface-mount SC-70/SOT-323 package, suitable for compact designs. It operates over a junction temperature range of -40°C to 150°C. Typical applications include broadband amplifiers, low-noise amplifiers for ISM bands, and ISM band oscillators.

BFU530WF Quick Information

Product Type: RF Transistor
Series: BFU530W
Canonical Name: NPN Wideband Silicon RF Transistor
Subcategory: RF Transistor

BFU530WF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BFU530WF Features

  • NPN wideband silicon RF transistor.
  • 11 GHz transition frequency.
  • Low noise figure 0.6 dB at 900MHz.
  • AEC-Q101 qualified for automotive.
  • Surface mount SOT323 package.

BFU530WF Applications

  • Broadband amplifiers up to 2 GHz.
  • Low noise amplifiers for ISM.
  • ISM band oscillators.
  • High supply voltage applications.

BFU530WF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating voltage range of the BFU530WF?

The collector-emitter breakdown voltage is 12V, collector-base breakdown voltage is 24V, and emitter-base breakdown voltage is 2V.

What package is the BFU530WF available in?

It is available in SC-70/SOT-323 surface mount package.

What is the operating temperature range of the BFU530WF?

The junction operating temperature range is -40°C to 150°C.

What is the transition frequency of the BFU530WF?

The transition frequency is 11 GHz.

What is the minimum DC current gain of the BFU530WF?

The minimum DC current gain is 60 at Ic=10mA and Vce=8V.

Is the BFU530WF AEC-Q101 qualified?

Yes, it is AEC-Q101 qualified per the datasheet.

What are the typical noise figure and gain at 900 MHz?

The minimum noise figure is 0.6 dB and the maximum power gain is 18.5 dB at 900 MHz.

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