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BFU530VL NXP BFU530VL is an NPN wideband silicon RF transistor in a SOT143B package. It features 12V collector-emitter voltage, 11GHz transition frequency, and 450mW power dissipation.
Mfr Part #:

BFU530VL

Available from 1 distributors
Mfr Name: NXP Semiconductors
NXP Semiconductors
NXP BFU530VL is an NPN wideband silicon RF transistor in a SOT143B package. It features 12V collector-emitter voltage, 11GHz transition frequency, and 450mW power dissipation.
✓ Total Stock: 110,000 pcs

BFU530VL Available from 1 distributor

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BFU530VL Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Gain
Mounting Type
Noise Figure (dB Typ @ f)
Operating Temperature
Power
Supplier Device Package
Transistor Type
Voltage
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BFU530VL Description

Short technical summary and product information.

The BFU530VL is an NPN wideband silicon RF transistor from NXP Semiconductors, designed for high-speed, low-noise applications up to 2 GHz. It is part of the BFU5 family and is housed in a plastic 4-pin dual-emitter SOT143B surface mount package.

 

Key electrical specifications include a maximum collector-emitter voltage of 12V, maximum collector current of 40mA, and a total power dissipation of 450mW. The transistor offers a typical transition frequency (fT) of 11GHz at 15mA and 8V, and a minimum DC current gain (hFE) of 60 at 10mA and 8V. Noise figure is typically 1.1dB at 1.8GHz, with a minimum noise figure of 0.7dB at 900MHz. Maximum stable gain is 21.5dB at 900MHz, and output power at 1dB gain compression is 10dBm.

 

The device is AEC-Q101 qualified, making it suitable for automotive applications. It is intended for broadband amplifiers, low noise amplifiers for ISM applications, and ISM band oscillators. The operating temperature range is -40°C to 150°C.

BFU530VL Quick Information

Product Type: RF Transistor
Series: BFU530
Canonical Name: NXP BFU530VL NPN Wideband Silicon RF Transistor
Subcategory: RF Transistor

BFU530VL Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BFU530VL Features

  • NPN wideband silicon RF transistor.
  • 11GHz transition frequency.
  • Low noise figure 0.7dB at 900MHz.
  • AEC-Q101 qualified for automotive.
  • Surface mount SOT143B package.

BFU530VL Applications

  • Broadband amplifiers up to 2 GHz.
  • Low noise amplifiers for ISM applications.
  • ISM band oscillators.
  • High supply voltage applications.

BFU530VL FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating voltage of the BFU530VL?

The maximum collector-emitter voltage is 12V, collector-base voltage is 24V, and emitter-base voltage is 2V.

What is the package type of the BFU530VL?

The BFU530VL is available in a SOT143B surface mount package (also referred to as TO-253-4 or TO-253AA).

What is the operating temperature range?

The operating temperature range is -40°C to 150°C (junction temperature).

Is the BFU530VL RoHS compliant?

The part is listed as RoHS3 Compliant, but this status is unverified.

What is the transition frequency of the BFU530VL?

The typical transition frequency (fT) is 11GHz at Ic=15mA, Vce=8V, f=900MHz.

What is the maximum collector current?

The maximum collector current is 40mA.

Is the BFU530VL AEC-Q101 qualified?

Yes, the BFU530VL is AEC-Q101 qualified for automotive applications.

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