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BFU530AR The NXP Semiconductors BFU530AR is an NPN silicon RF transistor designed for high speed and low noise applications. It features a collector-emitter voltage of 12V and a transition frequency of 11GHz.
Mfr Part #:

BFU530AR

Available from 4 distributors
Mfr Name: NXP Semiconductors
NXP Semiconductors
The NXP Semiconductors BFU530AR is an NPN silicon RF transistor designed for high speed and low noise applications. It features a collector-emitter voltage of 12V and a transition frequency of 11GHz.
Total Stock: 5,280 pcs

BFU530AR Available from 4 distributors

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BFU530AR Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Collector Current
Collector-Emitter Voltage
Current
DC Current Gain (hFE)
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Gain
Halogen Free
Lead Spacing
Lead Style
Mounting Type
Noise Figure
Noise Figure (dB Typ @ f)
Operating Temperature
Power
Storage Temperature
Supplier Device Package
Tape & Reel
Total Power Dissipation
Transistor Type
Transition Frequency (fT)
Voltage

BFU530AR Description

Short technical summary and product information.

The BFU530AR from NXP Semiconductors is an NPN silicon RF transistor suitable for high-speed, low-noise applications. It operates with a collector-emitter voltage of up to 12V and a collector current of 40mA, with a total power dissipation of 450mW.

 

This transistor boasts a transition frequency (fT) of 11GHz, a DC current gain (hFE) of 60 at 10mA and 8V, and a noise figure of 0.6dB at 900MHz. It provides a maximum stable gain of 18dB at 900MHz.

 

The BFU530AR is housed in a SOT-23 (TO-236AB) surface mount package, making it suitable for compact designs. Its operating temperature range is from -40°C to 150°C (TJ).

 

This component is AEC-Q101 qualified and is designed for broadband amplifiers up to 2GHz, low noise amplifiers for ISM applications, and ISM band oscillators.

BFU530AR Quick Information

Product Type: RF Transistor
Series: BFU5
Canonical Name: BFU530AR NPN Silicon RF Transistor
Subcategory: RF Bipolar Junction Transistor (BJT)

BFU530AR Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

BFU530AR Features

  • NPN silicon RF transistor for high speed.
  • Collector-emitter voltage is 12V.
  • Transition frequency up to 11GHz.
  • Low noise figure of 0.6dB.
  • Surface mount SOT-23 package.

BFU530AR Applications

  • Broadband amplifiers up to 2GHz.
  • Low noise amplifiers for ISM.
  • ISM band oscillators.
  • High supply voltage applications.

BFU530AR FAQs

11 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage for the BFU530AR?

The collector-emitter voltage is 12V.

What is the maximum collector current?

The maximum collector current is 40mA.

What is the total power dissipation?

The total power dissipation is 450mW.

What is the DC current gain (hFE)?

The DC current gain is 60 @ 10mA, 8V.

What is the noise figure?

The noise figure is 0.6dB @ 900MHz.

What is the gain of the BFU530AR?

The gain is 18dB.

What is the transition frequency (fT)?

The transition frequency is 11GHz.

What is the operating temperature range?

The operating temperature range is -40°C to 150°C (TJ).

What package is the BFU530AR in?

The package is TO-236-3, SC-59, SOT-23-3.

How is the BFU530AR mounted?

It is a surface mount device.

Is the BFU530AR RoHS compliant?

Yes, it is RoHS3 Compliant.

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