DistyParts Icon
BFU520YX BFU520YX is a dual NPN wideband silicon RF transistor from NXP Semiconductors. It features a 12V collector-emitter breakdown voltage, 10GHz transition frequency, and 0.65dB noise figure at 900MHz.
Mfr Part #:

BFU520YX

Available from 2 distributors
Mfr Name: NXP Semiconductors
NXP Semiconductors
BFU520YX is a dual NPN wideband silicon RF transistor from NXP Semiconductors. It features a 12V collector-emitter breakdown voltage, 10GHz transition frequency, and 0.65dB noise figure at 900MHz.
✓ Total Stock: 12,195 pcs
$ Price Range: $0.42 - $0.95

BFU520YX Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Flip Electronics ✓
Non-Authorised Inventory information
9,195 pcs
On Request
9195 pcs On Request 1 On Request On Request On Request On Request On Request
Fe Components ✓
Non-Authorised Inventory information
3,000 pcs
On Request
3000 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

BFU520YX Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Gain
Mounting Type
Noise Figure (dB Typ @ f)
Operating Temperature
Power
Supplier Device Package
Transistor Type
Voltage
View Similar Products (0)

BFU520YX Description

Short technical summary and product information.

The BFU520YX is a dual NPN wideband silicon RF transistor designed for high-speed, low-noise applications up to 2 GHz. It is part of the BFU5 family and is AEC-Q101 qualified. Key electrical characteristics include a maximum collector-emitter breakdown voltage of 12V, a maximum collector current of 30mA, and a typical transition frequency of 10GHz. The transistor offers a typical noise figure of 0.65dB at 900MHz and a typical gain of 19dB. It is housed in a 6-pin SOT363 surface-mount package, suitable for compact designs. The device operates over a temperature range of -40°C to 150°C.

BFU520YX Quick Information

Product Type: RF Bipolar Transistor
Canonical Name: BFU520YX Dual NPN RF Transistor
Subcategory: Dual NPN RF Transistor

BFU520YX Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BFU520YX Estimated Pricing

Qty Low High
1+ $0.95 $0.95
3,000+ $0.44 $0.44
6,000+ $0.43 $0.43
9,000+ $0.43 $0.43
15,000+ $0.42 $0.42
21,000+ $0.42 $0.42

Estimated market price range - modelled values for guidance only, not live distributor offers.

BFU520YX Features

  • Dual NPN RF transistor in SOT363 package.
  • 12V collector-emitter breakdown voltage.
  • 10GHz typical transition frequency.
  • 0.65dB noise figure at 900MHz.
  • AEC-Q101 qualified.

BFU520YX Applications

  • Ideal for low-noise RF amplifiers.
  • Used in wireless communication systems.
  • Suitable for high-speed switching circuits.
  • Applicable in RF front-end modules.

BFU520YX FAQs

7 frequently asked questions generated from this part’s specifications.
What is the package type of the BFU520YX?

The BFU520YX is available in a 6-TSSOP, SC-88, SOT-363 surface-mount package.

What is the operating temperature range?

The operating temperature range is -40°C to 150°C.

Is the BFU520YX RoHS compliant?

RoHS3 compliant (unverified).

What is the collector-emitter breakdown voltage?

The maximum collector-emitter breakdown voltage is 12V (open base).

What is the transition frequency?

The typical transition frequency is 10GHz at Ic=10mA, Vce=8V.

What is the noise figure?

The typical noise figure is 0.65dB at 900MHz.

What is the DC current gain (hFE)?

The DC current gain is minimum 60, typical 95, maximum 200 at Ic=5mA, Vce=8V.

Home
Account

Categories