BFU520YF The BFU520YF is a dual NPN wideband silicon RF transistor from NXP Semiconductors. It features 12V Vce, 30mA collector current, and 10GHz transition frequency.
Mfr Part #:

BFU520YF

Available from 1 distributors
Mfr Name: NXP Semiconductors
NXP Semiconductors
The BFU520YF is a dual NPN wideband silicon RF transistor from NXP Semiconductors. It features 12V Vce, 30mA collector current, and 10GHz transition frequency.
✓ Total Stock: 50,000 pcs

BFU520YF Available from 1 distributor

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BFU520YF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Gain
Mounting Type
Noise Figure (dB Typ @ f)
Operating Temperature
Power
Storage Temperature
Supplier Device Package
Transistor Type
Voltage

BFU520YF Description

Short technical summary and product information.

BFU520YF is a dual NPN wideband silicon RF transistor manufactured by NXP Semiconductors. It is designed for high-speed, low-noise applications in a compact 6-pin SOT363 surface-mount package. The transistor is part of the BFU5 family and is suitable for small signal to medium power operation up to 2 GHz.

 

Key electrical specifications include a maximum collector-emitter voltage of 12 V, collector-base voltage of 24 V, and maximum collector current of 30 mA. The device offers a transition frequency (ft) of 10 GHz, making it ideal for RF applications. It features a low noise figure of 0.65 dB at 900 MHz and a typical maximum stable gain of 19 dB at 900 MHz. DC current gain (hFE) ranges from 60 to 200 at 5 mA, 8 V. The collector capacitance is 0.48 pF, and output power at 1 dB compression is 7 dBm.

 

The BFU520YF is AEC-Q101 qualified, ensuring reliability for automotive-grade applications. It is suitable for broadband differential amplifiers, low-noise amplifiers for ISM band applications, and oscillators. The device operates over a junction temperature range of -40°C to 150°C and has a maximum power dissipation of 450 mW.

 

Packaged in SOT363 (also known as 6-TSSOP, SC-88), the BFU520YF is surface mountable and compatible with standard reflow soldering processes. The dual NPN configuration allows for compact designs in differential amplifier stages.

BFU520YF Quick Information

Product Type: RF Transistor
Series: BFU5
Canonical Name: BFU520YF Dual NPN Wideband Silicon RF Transistor
Subcategory: Dual NPN RF Transistor

BFU520YF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BFU520YF Features

  • Dual NPN configuration for differential designs.
  • Low noise figure of 0.65 dB at 900 MHz.
  • High transition frequency of 10 GHz.
  • AEC-Q101 qualified for automotive applications.
  • Surface mount SOT363 package.

BFU520YF Applications

  • Ideal for low-noise RF amplifiers in ISM bands.
  • Suitable for broadband differential amplifiers up to 2 GHz.
  • Used in high-frequency oscillators.
  • Automotive RF applications requiring AEC-Q101 qualification.

BFU520YF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum operating voltage of the BFU520YF?

The maximum collector-emitter voltage is 12 V, and the maximum collector-base voltage is 24 V.

What package does the BFU520YF come in?

The BFU520YF is available in a 6-pin SOT363 surface mount package (also known as 6-TSSOP, SC-88).

What is the operating temperature range of the BFU520YF?

The junction temperature range is -40°C to 150°C.

Is the BFU520YF RoHS compliant?

The BFU520YF is listed as RoHS3 compliant, but this status is unverified and should be confirmed with the manufacturer.

What is the noise figure of the BFU520YF at 900 MHz?

The minimum noise figure is 0.65 dB at 900 MHz, and the typical noise figure at 1.8 GHz is 1 dB.

What is the typical gain of the BFU520YF?

The typical maximum power gain is 19 dB at 900 MHz, and the typical gain is 14 dB.

What is the transition frequency of the BFU520YF?

The transition frequency (ft) is typically 10 GHz at Ic=10mA, Vce=8V.

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