| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
20,000 pcs
|
20000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Gain | |
| Mounting Type | |
| Noise Figure (dB Typ @ f) | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Transistor Type | |
| Voltage |
The BFU520WF from NXP Semiconductors is an NPN silicon RF transistor designed for high-speed, low-noise applications up to 2 GHz. It features a collector-emitter breakdown voltage of 12V, a collector current rating of 30mA, and a total power dissipation of 450mW at a solder point temperature of up to 87°C. The device offers a DC current gain of 60 to 200 (typical 95) at 5mA collector current and 8V collector-emitter voltage, and a transition frequency of 10GHz, making it suitable for RF amplification and oscillator circuits.
The transistor is housed in a compact SC-70 (SOT-323) surface-mount package, ideal for space-constrained designs. It operates over a junction temperature range of -40°C to 150°C. With a typical gain of 13dB and a noise figure of 1dB at 1.8GHz, it provides reliable performance in low-noise amplifier stages. The BFU520WF is part of the BFU5 family of RF transistors from NXP, known for high breakdown voltage and low noise characteristics.
This component is suitable for broadband amplifiers, ISM band oscillators, and other RF applications requiring high supply voltages and high breakdown voltages. Its surface-mount package allows for easy integration into automated manufacturing processes.
SC-70 (SOT-323) surface mount package.
-40°C to 150°C (junction temperature).
RoHS3 Compliant (unverified).
12V.
10 GHz.
60 to 200 (typical 95) at Ic=5mA, Vce=8V.
1 dB typical at 1.8GHz.