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BFU520R BFU520R is an NPN wideband silicon RF transistor from NXP Semiconductors. It features 12V collector-emitter breakdown voltage, 10.5GHz transition frequency, and 0.65dB noise figure at 900MHz.
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BFU520R

Available from 1 distributors
Mfr Name: NXP Semiconductors
NXP Semiconductors
BFU520R is an NPN wideband silicon RF transistor from NXP Semiconductors. It features 12V collector-emitter breakdown voltage, 10.5GHz transition frequency, and 0.65dB noise figure at 900MHz.
✓ Total Stock: 6,000 pcs

BFU520R Available from 1 distributor

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BFU520R Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Gain
Mounting Type
Noise Figure (dB Typ @ f)
Operating Temperature
Power
Storage Temperature
Supplier Device Package
Transistor Type
Voltage
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BFU520R Description

Short technical summary and product information.

The BFU520R is an NPN silicon RF transistor designed for high speed, low noise applications. It is part of the NXP BFU5 family, suitable for small signal to medium power applications up to 2 GHz. The device is housed in a plastic 4-pin dual-emitter SOT143B package.

 

Key electrical specifications include a maximum collector-emitter breakdown voltage of 12 V, collector-base breakdown voltage of 24 V, and emitter-base breakdown voltage of 2 V. The maximum collector current is 30 mA, and total power dissipation is 450 mW at a solder point temperature up to 87°C. The transistor offers a DC current gain (hFE) from 60 to 200 at 5 mA and 8 V, a transition frequency of 10.5 GHz, and a typical gain of 20 dB at 900 MHz.

 

Designed for low noise and high breakdown applications, the BFU520R achieves a minimum noise figure of 0.65 dB at 900 MHz and a typical output power at 1 dB compression of 6.5 dBm. It is AEC-Q101 qualified, making it suitable for automotive applications. The device operates over a junction temperature range of -40°C to 150°C.

 

The BFU520R is surface mountable and intended for use in broadband amplifiers, low noise amplifiers for ISM applications, ISM band oscillators, and other high supply voltage circuits.

BFU520R Quick Information

Product Type: RF Transistor
Series: BFU520
Canonical Name: BFU520R NPN Wideband Silicon RF Transistor
Subcategory: RF Transistors

BFU520R Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1
REACH Status: REACH Unaffected

BFU520R Features

  • Low noise figure 0.65dB at 900MHz.
  • 10.5GHz transition frequency silicon technology.
  • AEC-Q101 qualified for automotive use.
  • Surface mount SOT143B package.
  • 12V collector-emitter breakdown voltage.

BFU520R Applications

  • Broadband amplifiers up to 2GHz.
  • Low noise amplifiers for ISM applications.
  • ISM band oscillators.
  • High supply voltage circuits.

BFU520R FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage of the BFU520R?

The maximum collector-emitter breakdown voltage (VCEO) is 12 V.

What package is the BFU520R available in?

The BFU520R is available in a SOT143B surface mount package (also referenced as TO-253-4).

What is the operating temperature range of the BFU520R?

The operating junction temperature range is -40°C to 150°C.

Is the BFU520R RoHS compliant?

The BFU520R is listed as RoHS3 compliant, but this status is unverified.

What is the transition frequency of the BFU520R?

The typical transition frequency (fT) is 10.5 GHz at Ic=10mA, Vce=8V.

What is the noise figure of the BFU520R at 900MHz?

The minimum noise figure (NFmin) is 0.65 dB at 900MHz with Ic=1mA, Vce=8V.

What is the maximum collector current of the BFU520R?

The maximum collector current (IC) is 30 mA.

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