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BFU520AR NPN wideband silicon RF transistor from NXP, designed for low noise and high frequency applications up to 2 GHz. Features 12V Vce, 30mA Ic, 10GHz transition frequency, and 0.7dB noise figure.
Mfr Part #:

BFU520AR

Available from 1 distributors
Mfr Name: NXP Semiconductors
NXP Semiconductors
NPN wideband silicon RF transistor from NXP, designed for low noise and high frequency applications up to 2 GHz. Features 12V Vce, 30mA Ic, 10GHz transition frequency, and 0.7dB noise figure.
✓ Total Stock: 150 pcs

BFU520AR Available from 1 distributor

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✓ Non-Authorised
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Optech Co.,Limited ✓
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150 pcs
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150 pcs On Request 1 On Request On Request On Request On Request On Request
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BFU520AR Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Gain
Mounting Type
Noise Figure (dB Typ @ f)
Operating Temperature
Power
Storage Temperature
Supplier Device Package
Transistor Type
Voltage
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BFU520AR Description

Short technical summary and product information.

The BFU520AR is an NPN silicon RF transistor from NXP Semiconductors, part of the BFU5 family. It is designed for high-speed, low-noise applications in a plastic, 3-pin SOT-23 surface-mount package. Key electrical specifications include a maximum collector-emitter voltage of 12V, collector-base voltage of 24V, and collector current of 30mA. The transistor offers a typical DC current gain (hFE) of 95 at 5mA and 8V, a transition frequency of 10GHz, and a minimum noise figure of 0.7dB at 900MHz. Maximum power gain is 18dB at 900MHz, and output power at 1dB gain compression is 7.0dBm. Collector capacitance is 0.53pF. The device is AEC-Q101 qualified for automotive applications. It is suitable for broadband amplifiers, low noise amplifiers, and ISM band oscillators up to 2 GHz. The operating temperature range is -40°C to 150°C, and maximum power dissipation is 450mW.

BFU520AR Quick Information

Product Type: RF Transistor
Series: BFU5
Canonical Name: BFU520AR NPN Wideband Silicon RF Transistor
Subcategory: RF Transistors

BFU520AR Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BFU520AR Features

  • Low noise figure of 0.7dB at 900MHz.
  • High transition frequency of 10GHz.
  • AEC-Q101 qualified for automotive.
  • Surface mount SOT-23 package.
  • Maximum power gain of 18dB at 900MHz.

BFU520AR Applications

  • Ideal for low noise RF amplifiers.
  • Used in ISM band oscillators.
  • Suitable for broadband amplifiers up to 2GHz.
  • Designed for high supply voltage applications.

BFU520AR FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the BFU520AR?

The maximum collector-emitter voltage (Vceo) is 12V.

What is the operating temperature range?

The operating temperature range is -40°C to 150°C (junction temperature).

What package does the BFU520AR come in?

It is available in a TO-236-3, SC-59, or SOT-23-3 package, with the supplier device package being SOT-23 (TO-236AB).

Is the BFU520AR RoHS compliant?

The RoHS status is listed as RoHS3 Compliant, but this is unverified.

What is the typical noise figure of the BFU520AR?

The typical noise figure is 0.7dB at 900MHz (Ic=1mA, Vce=8V).

What is the transition frequency of the BFU520AR?

The typical transition frequency is 10GHz at Ic=10mA, Vce=8V, f=900MHz.

Is the BFU520AR AEC-Q101 qualified?

Yes, it is AEC-Q101 qualified as verified from the datasheet.

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