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BFT92E6327 BFT92E6327 by Infineon Technologies is a PNP RF bipolar transistor. It features 15V collector-emitter breakdown voltage, 25mA collector current, and 5GHz transition frequency.
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BFT92E6327

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
BFT92E6327 by Infineon Technologies is a PNP RF bipolar transistor. It features 15V collector-emitter breakdown voltage, 25mA collector current, and 5GHz transition frequency.
✓ Total Stock: 2,568 pcs

BFT92E6327 Available from 1 distributor

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Components Technology Group, Inc. ✓
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2,568 pcs
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BFT92E6327 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Gain
Mounting Type
Noise Figure (dB Typ @ f)
Power
Supplier Device Package
Tape & Reel
Transistor Type
Voltage
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BFT92E6327 Description

Short technical summary and product information.

BFT92E6327 is a PNP bipolar transistor designed for radio frequency (RF) applications from Infineon Technologies. The device is rated for a maximum collector-emitter breakdown voltage of 15V and a maximum collector current of 25mA. It dissipates up to 200mW of power, making it suitable for low-power RF circuits.

 

The transistor offers a transition frequency of 5GHz, enabling use in high-frequency signal processing. It provides a typical gain of 8dB to 13.5dB and a noise figure of 2dB to 3.2dB across 900MHz to 1.8GHz, which is common for RF amplifier stages. The minimum DC current gain is 15 when measured at 15mA collector current and 8V collector-emitter voltage.

 

The BFT92E6327 is supplied in a surface-mount TO-236-3 (SC-59, SOT-23-3) package, with a specific supplier device package designator PG-SOT23. This small footprint makes it appropriate for compact, high-density PCB designs where space is limited.

BFT92E6327 Quick Information

Product Type: RF Transistor
Canonical Name: BFT92E6327 RF Bipolar PNP Transistor
Subcategory: RF

BFT92E6327 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

BFT92E6327 Features

  • PNP RF bipolar transistor for amplification.
  • 15V maximum collector-emitter breakdown voltage.
  • 25mA maximum collector current rating.
  • 5GHz transition frequency for RF applications.
  • Surface mount in SOT-23-3 package.

BFT92E6327 Applications

  • Used in RF amplifier and buffer circuits.
  • Suitable for low-noise RF signal amplification.
  • Fits high-frequency oscillator and mixer designs.

BFT92E6327 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage of the BFT92E6327?

The maximum collector-emitter breakdown voltage is 15V.

What package is the BFT92E6327 available in?

The BFT92E6327 is available in a TO-236-3 (SC-59, SOT-23-3) surface mount package, with supplier device package PG-SOT23.

Is the BFT92E6327 RoHS compliant?

The product data lists the BFT92E6327 as RoHS3 Compliant.

What is the maximum collector current of the BFT92E6327?

The maximum collector current is 25mA.

What is the transition frequency of the BFT92E6327?

The transition frequency is 5GHz.

What is the gain of the BFT92E6327?

The gain ranges from 8dB to 13.5dB.

What is the noise figure of the BFT92E6327?

The noise figure is 2dB to 3.2dB at frequencies from 900MHz to 1.8GHz.

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