| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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13,500 pcs
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13500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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3,456 pcs
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3456 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request | |
|
279 pcs
|
279 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BFT92 is a PNP transistor manufactured by NXP Semiconductors, designed for high-frequency applications. It is primarily intended for use in RF wideband amplifiers, such as aerial amplifiers, radar systems, oscilloscopes, and spectrum analyzers.
This transistor offers low intermodulation distortion and high power gain. Its very high transition frequency (5 GHz typical) provides excellent wideband properties and low noise performance up to high frequencies. The BFT92 is supplied in a plastic SOT-23 envelope, suitable for surface mount applications.
Key electrical characteristics include a collector-base voltage of 20V and a collector-emitter voltage of 15V. The DC collector current is up to 25mA, with a peak collector current of 35mA. The total power dissipation is limited to 300mW at a soldering point temperature of 95°C.
NPN complements for the BFT92 are the BFR92 and BFR92A. This component is suitable for various RF circuit designs requiring high-frequency amplification and signal integrity.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The typical transition frequency of the BFT92 transistor is 5 GHz at IC = -14 mA and VCE = -10 V.
The maximum collector-emitter voltage (VCEO) for the BFT92 is 15 V when the base is open.
The BFT92 transistor is supplied in a plastic SOT-23 envelope.
The typical noise figure for the BFT92 at 500 MHz is 2.5 dB.
The typical maximum unilateral power gain (GUM) for the BFT92 is 18 dB at 500 MHz.