| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,808 pcs
|
2808 pcs | On Request | 1 | On Request | On Request | 1112+ | On Request | On Request | |
|
1,156 pcs
|
1156 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Transistor Type |
The BFT25.215 from NXP Semiconductors is an RF Bipolar Transistor suitable for various radio frequency applications. This component is housed in a SOT-23 surface-mount package, facilitating integration into compact electronic designs.
Key electrical characteristics include a Collector-Emitter Voltage of 5V, a Collector Current of 6.5mA, and a Power Dissipation of 30mW. The transistor offers a Current Gain of 40 and operates at frequencies up to 2.3 GHz. It is classified as an NPN type transistor.
The BFT25.215 is designed for surface mounting, making it suitable for automated assembly processes. Its specifications make it a component for RF circuits requiring specific bipolar transistor performance.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.87 | $1.87 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The Collector-Emitter Voltage is 5 V.
The operating frequency is 2.3 GHz.
The Collector Current is 6.5 mA.
The Power Dissipation is 30 mW.
The Current Gain is 40.
It is an NPN type transistor.
It is an RF transistor.