| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,800 pcs
|
2800 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Junction Temperature | |
| Mounting Type | |
| Tape & Reel | |
| Thermal Resistance |
The Philips BFS540 is an NPN transistor in a SOT-323 package, suitable for RF wideband amplifier applications. It operates with signal frequencies up to 2 GHz and is intended for use in systems such as satellite TV and portable communication equipment.
Key electrical characteristics include a high transition frequency of 9 GHz and a maximum unilateral power gain of 14 dB at 900 MHz. The transistor also features a low noise figure of 1.3 dB at 900 MHz. Gold metallization ensures excellent reliability.
With a collector-emitter voltage rating of 15V and a DC collector current of up to 120mA, the BFS540 is designed for robust performance. Its SOT-323 package is ideal for surface mount applications where space is a consideration.
| Qty | Low | High |
|---|---|---|
| 1+ | $5.77 | $5.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The transition frequency (fT) of the BFS540 transistor is typically 9 GHz at 40 mA collector current, 8 V collector-emitter voltage, and 1 GHz frequency.
The maximum unilateral power gain (GUM) for the BFS540 is typically 14 dB at 40 mA collector current, 8 V collector-emitter voltage, and 900 MHz frequency.
The noise figure (F) of the BFS540 transistor is typically 1.3 dB at 10 mA collector current, 8 V collector-emitter voltage, and 900 MHz frequency.
The BFS540 transistor is supplied in a SOT-323 package.
The RoHS status of the BFS540 transistor is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the BFS540 is Level 1.