BFS481 The Infineon BFS481 is a low-noise silicon bipolar RF transistor designed for broadband amplifiers. It offers a transition frequency of 8 GHz and a minimum noise figure of 0.9 dB.
Mfr Part #:

BFS481

Available from 1 distributors
Mfr Name: Infineon
Infineon
The Infineon BFS481 is a low-noise silicon bipolar RF transistor designed for broadband amplifiers. It offers a transition frequency of 8 GHz and a minimum noise figure of 0.9 dB.
✓ Total Stock: 1,803 pcs
$ Price Range: $0.24

BFS481 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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1,803 pcs
1803 pcs On Request 1 On Request On Request On Request On Request On Request

BFS481 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Halogen Free
Junction Temperature
Mounting Type
SVHC Present
Storage Temperature

BFS481 Description

Short technical summary and product information.

The Infineon BFS481 is a low-noise silicon bipolar RF transistor suitable for high-gain broadband amplifiers operating at collector currents from 0.5 mA to 12 mA. This device features a transition frequency (fT) of 8 GHz and a minimum noise figure (NFmin) of 0.9 dB at 900 MHz.

 

Designed for ease of use, the BFS481 comes in an industry-standard SOT363 package. It is Pb-free (RoHS compliant) and halogen-free, with visible leads for convenient handling. The transistor is ESD sensitive and requires appropriate handling precautions.

 

Key electrical characteristics include a collector-emitter voltage (VCEO) of 12V, a collector current (IC) of up to 20 mA, and a DC current gain (hFE) typically between 70 and 140. The device also offers a maximum stable power gain (Gms) of 20 dB at 900 MHz and a maximum available power gain (Gma) of 15 dB at 1.8 GHz. Capacitance values such as collector-base capacitance (Ccb) are typically 0.23 pF.

 

This RF transistor is well-suited for applications requiring low noise and high gain in broadband amplifier designs. Its specifications make it a viable component for various RF circuits.

BFS481 Quick Information

Product Type: RF Transistor
Series: BFS481
Canonical Name: BFS481 Low Noise Silicon Bipolar RF Transistor
Subcategory: RF Transistor

BFS481 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

BFS481 Estimated Pricing

Qty Low High
1+ $0.24 $0.24

Estimated market price range - modelled values for guidance only, not live distributor offers.

BFS481 Features

  • Low noise, high-gain broadband amplifiers.
  • 8 GHz transition frequency.
  • 0.9 dB minimum noise figure.
  • Pb-free and halogen-free package.
  • SOT363 surface mount package.

BFS481 Applications

  • Low-noise amplifier for RF front-ends.
  • Broadband amplifier up to 8 GHz.
  • High-gain amplifier at 900 MHz.
  • Suitable for collector currents 0.5-12 mA.

BFS481 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the transition frequency of the BFS481 transistor?

The transition frequency (fT) of the BFS481 transistor is typically 8 GHz at 10 mA collector current and 8 V collector-emitter voltage.

What is the minimum noise figure for the BFS481?

The minimum noise figure (NFmin) for the BFS481 is 0.9 dB at 900 MHz (IC = 2 mA, VCE = 8 V).

What package type is the BFS481 supplied in?

The BFS481 is supplied in a SOT363 package.

What is the RoHS status of the BFS481?

The BFS481 is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the BFS481?

The Moisture Sensitivity Level (MSL) for the BFS481 is 1 Unlimited.

Is the BFS481 halogen-free?

Yes, the BFS481 is halogen-free.

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