Mfr Part #:

BFS20W115

Available from 1 distributors

Mfr Name: NXP Semiconductors

NPN medium frequency transistor with 20V Vceo and 25mA collector current. Designed for IF and VHF applications.

✓ Total Stock: 130,020 pcs

BFS20W115 Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Optech Co.,Limited ✓ Non-Authorised Inventory information	130,020 pcs On Request	130020 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

BFS20W115 Specifications Quick View

Most important parameters for selection – full specs in datasheet.

SELECT ALL

Category	Transistors - Bipolar (BJT) - RF
Manufacturer Name	NXP Semiconductors
Junction Temperature	150 °C
Lead Style	Gull Wing
Mounting Type	Surface Mount
Storage Temperature	-65°C ~ 150°C
Termination Style	SMD

View Similar Products (0)

BFS20W115 Description

Short technical summary and product information.

The BFS20W115 is an NPN medium frequency transistor from NXP Semiconductors, designed for IF and VHF applications in thick and thin-film circuits. It features a maximum collector-emitter voltage of 20V and a maximum collector current of 25mA, with a total power dissipation of 200mW at 25°C ambient temperature.

This transistor offers a very low typical feedback capacitance of 350 fF, making it suitable for high-frequency signal processing. It is housed in a surface-mount SOT323 (SC-70) plastic package with gull wing leads, enabling compact PCB designs.

The BFS20W115 operates over an ambient temperature range of -65°C to +150°C and has a storage temperature range matching its operating range. Its junction temperature is rated to a maximum of 150°C, with a thermal resistance from junction to ambient of 625 K/W.

BFS20W115 Quick Information

Product Type: RF Bipolar Junction Transistor

Series: BFS20W

Canonical Name: BFS20W115 NPN Medium Frequency Transistor

Subcategory: RF Transistor

BFS20W115 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

BFS20W115 Features

NPN medium frequency transistor design.
Maximum 20V collector-emitter voltage rating.
Maximum 25mA collector current capability.
Very low 350 fF typical feedback capacitance.
Surface-mount SOT323 (SC-70) package.

BFS20W115 Applications

Ideal for IF amplifier circuits.
Suitable for VHF applications.
Used in thick and thin-film circuits.

BFS20W115 FAQs

5 frequently asked questions generated from this part’s specifications.

What is the maximum collector-emitter voltage of the BFS20W115?

The maximum collector-emitter voltage (Vceo) is 20V.

What is the maximum collector current for this transistor?

The maximum DC collector current is 25mA.

What is the package type of the BFS20W115?

The BFS20W115 is housed in a SOT323 (SC-70) surface-mount package.

What is the operating temperature range?

The operating ambient temperature range is -65°C to +150°C.

What is the total power dissipation of the BFS20W115?

The total power dissipation is 200mW at 25°C ambient temperature.