BFS20TA The Diodes Incorporated BFS20TA is an NPN RF small signal bipolar transistor. It features a maximum collector-emitter voltage of 20V and a maximum collector current of 25mA.
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BFS20TA

Available from 1 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
The Diodes Incorporated BFS20TA is an NPN RF small signal bipolar transistor. It features a maximum collector-emitter voltage of 20V and a maximum collector current of 25mA.
Total Stock: 36,000 pcs
$ Price Range: $0.27

BFS20TA Available from 1 distributor

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BFS20TA Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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BFS20TA Description

Short technical summary and product information.

The Diodes Incorporated BFS20TA is an NPN RF small signal bipolar transistor designed for high-frequency applications. It offers a maximum collector-emitter voltage of 20V and a maximum collector current of 0.025A (25mA). The transistor has a minimum DC current gain (hFE) of 40 and a nominal transition frequency (fT) of 450MHz, indicating its suitability for RF amplification.

 

This component is housed in a small outline package with gull wing termination, designed for surface mounting. The operating temperature range extends up to 150°C. The BFS20TA is part of the RF Small Signal Bipolar Transistors category, suitable for amplifier applications.

BFS20TA Quick Information

Product Type: RF Small Signal Bipolar Transistor
Canonical Name: BFS20TA NPN RF Small Signal Bipolar Transistor
Subcategory: RF

BFS20TA Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BFS20TA Estimated Pricing

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1+ $0.27 $0.27

Estimated market price range - modelled values for guidance only, not live distributor offers.

BFS20TA Features

  • NPN RF small signal bipolar transistor.
  • 20V maximum collector-emitter voltage.
  • 25mA maximum collector current.
  • 450MHz nominal transition frequency.
  • Surface mount small outline package.

BFS20TA Applications

  • Ideal for VHF signal amplification circuits.
  • Suitable for RF amplifier stages in receivers.
  • Used in low-power RF oscillator circuits.
  • Designed for general-purpose RF switching applications.
  • Common in small-signal RF driver stages.

BFS20TA FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the BFS20TA?

The maximum collector-emitter voltage for the BFS20TA is 20V.

What is the maximum collector current of the BFS20TA transistor?

The BFS20TA transistor has a maximum collector current of 0.025A (25mA).

What is the minimum DC current gain (hFE) for the BFS20TA?

The minimum DC current gain (hFE) for the BFS20TA is 40.

What is the transition frequency of the BFS20TA?

The nominal transition frequency (fT) of the BFS20TA is 450MHz.

What is the operating temperature range for the BFS20TA?

The BFS20TA can operate at temperatures up to 150°C.

What type of package is the BFS20TA in?

The BFS20TA is in a small outline package (R-PDSO-G3) designed for surface mounting.

What is the RoHS status of the BFS20TA?

The BFS20TA is RoHS3 Compliant.

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