| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,955 pcs
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3955 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BFS20 from NXP Semiconductors is an NPN medium frequency transistor suitable for IF and VHF thick and thin-film circuit applications. It is housed in a compact SOT23 plastic package, making it ideal for surface-mount designs.
Key electrical characteristics include a maximum collector-emitter voltage (VCEO) of 20V and a continuous collector current (IC) of 25mA. The transistor exhibits a typical transition frequency (fT) of 275 to 450 MHz at 5mA collector current and 10V collector-emitter voltage. Its low feedback capacitance, typically 350 fF, is beneficial for high-frequency applications.
This device operates within a wide ambient temperature range of -65°C to +150°C and has a maximum junction temperature of 150°C. The power dissipation is rated at 250mW when mounted on an FR4 printed-circuit board at an ambient temperature of 25°C. The BFS20 is designed for reliable performance in demanding electronic circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the BFS20 transistor is 20V.
The maximum continuous collector current (IC) for the BFS20 is 25mA.
The BFS20 transistor is supplied in a SOT23 plastic surface-mounted package.
The typical transition frequency (fT) for the BFS20 transistor is 275 to 450 MHz.
The typical feedback capacitance (Cre) of the BFS20 transistor is 350 fF.
The operating ambient temperature range for the BFS20 transistor is -65°C to +150°C.