| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BFS17P is an NPN silicon RF transistor designed for broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA. It is also suitable for mixers and oscillators in sub-GHz applications. Key electrical characteristics include a maximum collector-emitter voltage of 15 V, maximum collector current of 25 mA, typical noise figure of 3.5 dB at 800 MHz, typical output intercept point (OIP3) of 21.5 dBm, and typical 1 dB output compression point (P1dB) of 10 dBm. The transition frequency is 1.4 GHz typical. The device is housed in a SOT-23 surface-mount package (PG-SOT23) and is Pb-free (RoHS compliant). Maximum total power dissipation is 280 mW, and the maximum junction temperature is 150 °C. The DC current gain (hFE) is minimum 40 at Ic=2mA, Vce=1V.
15 V.
SOT-23 (PG-SOT23).
150 °C.
Yes, it is RoHS3 compliant (Pb-free package).
3.5 dB at 800 MHz.
1.4 GHz.