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BFS17HTA The BFS17HTA is an NPN silicon planar RF transistor designed for high-frequency applications. It features a transition frequency of 1.3 GHz and comes in a SOT-23-3 surface-mount package.
Mfr Part #:

BFS17HTA

Available from 1 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
The BFS17HTA is an NPN silicon planar RF transistor designed for high-frequency applications. It features a transition frequency of 1.3 GHz and comes in a SOT-23-3 surface-mount package.
✓ Total Stock: 2,463 pcs
$ Price Range: $0.15 - $0.19

BFS17HTA Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Bristol Electronics ✓
Non-Authorised Inventory information
2,463 pcs
On Request
2463 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

BFS17HTA Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Noise Figure (dB Typ @ f)
Operating Temperature
Power
Supplier Device Package
Transistor Type
Voltage
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BFS17HTA Description

Short technical summary and product information.

The BFS17HTA is an NPN silicon planar RF transistor manufactured by Diodes Incorporated. It is designed for general-purpose RF amplification and switching applications up to 1.3 GHz. The device offers a maximum collector-base voltage of 25 V, collector-emitter voltage of 15 V, and continuous collector current of 25 mA. Power dissipation is rated at 330 mW at 25°C ambient temperature. The transistor features a DC current gain (hFE) range of 70 to 200 at 2 mA collector current, and a typical noise figure of 4.5 dB at 500 MHz. The device is housed in a standard SOT-23-3 surface-mount package, suitable for automated assembly. Its compact size and high-frequency performance make it suitable for RF amplifier, oscillator, and mixer circuits in communication equipment. The operating temperature range is -55°C to 150°C.

BFS17HTA Quick Information

Product Type: RF Transistor
Canonical Name: BFS17HTA
Subcategory: RF Transistor

BFS17HTA Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BFS17HTA Estimated Pricing

Qty Low High
3,000+ $0.19 $0.19
6,000+ $0.17 $0.17
9,000+ $0.17 $0.17
15,000+ $0.16 $0.16
21,000+ $0.15 $0.15
30,000+ $0.15 $0.15

Estimated market price range - modelled values for guidance only, not live distributor offers.

BFS17HTA Features

  • NPN silicon planar RF transistor.
  • Transition frequency up to 1.3 GHz.
  • Maximum collector current of 25 mA.
  • Power dissipation of 330 mW.
  • Surface-mount SOT-23-3 package.

BFS17HTA Applications

  • Used in RF amplifier circuits.
  • Ideal for oscillator and mixer stages.
  • Suitable for high-frequency switching.
  • Common in communication equipment.
  • Used in signal processing modules.

BFS17HTA FAQs

6 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage rating of the BFS17HTA?

The maximum collector-emitter voltage is 15 V.

What is the package type of the BFS17HTA?

It is available in a SOT-23-3 surface-mount package.

What is the operating temperature range of the BFS17HTA?

-55°C to 150°C.

Is the BFS17HTA RoHS compliant?

Yes, it is listed as RoHS3 compliant (unverified).

What is the transition frequency of the BFS17HTA?

1.0 to 1.3 GHz (typical 1.3 GHz at 25 mA).

What is the DC current gain (hFE) of the BFS17HTA?

70 to 200 at 2 mA collector current and 1 V Vce.

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