| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
810 pcs
|
810 pcs | On Request | 1 | On Request | On Request | 0725+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Gain | |
| Halogen Free | |
| Mounting Type | |
| Noise Figure (dB Typ @ f) | |
| Operating Temperature | |
| Power | |
| SVHC Present | |
| Storage Temperature | |
| Supplier Device Package | |
| Transistor Type | |
| Voltage |
The BFS 481 E6327 is a low noise silicon bipolar RF transistor designed for high-gain broadband amplifiers. It consists of two galvanically isolated NPN transistors in a single surface-mount package, making it suitable for differential or cascode amplifier stages.
Key electrical characteristics include a collector-emitter breakdown voltage of 12V, maximum collector current of 20mA, and total power dissipation of 175mW. The device offers a typical DC current gain of 100 at 5mA collector current, and a transition frequency of 8GHz. It features low noise figures of 0.9dB at 900MHz and 1.2dB at 1.8GHz, with maximum stable gain of 20dB at 900MHz.
The transistor is packaged in a 6-pin SOT363 (also known as 6-VSSOP, SC-88) surface-mount package with supplier device package PG-SOT363-PO. The package is RoHS compliant and halogen free. The device is qualified according to AEC-Q101. The junction temperature is rated up to 150°C, with storage temperature range of -55 to 150°C.
| Qty | Low | High |
|---|---|---|
| 6,000+ | $0.24 | $0.24 |
| 9,000+ | $0.24 | $0.24 |
| 15,000+ | $0.23 | $0.23 |
| 21,000+ | $0.23 | $0.23 |
| 30,000+ | $0.23 | $0.23 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
12V minimum.
6-VSSOP, SC-88, SOT-363 (surface mount).
Junction temperature up to 150°C, storage temperature from -55°C to 150°C.
Yes, RoHS3 compliant and halogen free.
Maximum stable gain (Gms) is 20dB typical at 900MHz.
0.9dB typical at 900MHz and 1.2dB at 1.8GHz.
20mA maximum.