BFS 469L6 E6327

The BFS469L6E6327 is a dual NPN silicon RF transistor from Infineon Technologies, designed for low voltage/low current applications. It integrates two transistors: TR1 based on the BFR460L3 die and TR2 based on the BFR949L3 die. TR1 has a maximum collector-emitter voltage (VCEO) of 4.5V minimum breakdown and collector current of 50mA, while TR2 has 10V VCEO and 70mA IC. The transition frequency (fT) is 22GHz typical for TR1 and 9GHz typical for TR2. The DC current gain (hFE) is 130 typical for TR1 at 20mA, 3V and 140 typical for TR2 at 5mA, 3V. The noise figure is typically 1.1dB at 1.8GHz for TR1 and 1.5dB at 1.8GHz for TR2. This transistor is housed in a 6-pin TSLP-6-1 surface mount package, one of the smallest leadless packages available. It is suitable for VCO modules and low noise amplifiers. The operating temperature range is -65 to 150°C ambient, with a maximum junction temperature of 150°C. Total power dissipation is 200mW for TR1 and 250mW for TR2. The device requires careful ESD handling as it is ESD sensitive. The thermal resistance from junction to soldering point is ≤230 K/W for TR1 and ≤200 K/W for TR2. The collector-base capacitance is 0.5pF max for TR1 and 0.45pF max for TR2.