BFS 460L6 E6327 Infineon BFS 460L6 E6327 is a dual NPN silicon RF transistor with a transition frequency of 22 GHz and collector-emitter breakdown voltage of 5.8 V. It comes in a compact 6-pin TSLP-6 surface-mount package.
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BFS 460L6 E6327

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
Infineon BFS 460L6 E6327 is a dual NPN silicon RF transistor with a transition frequency of 22 GHz and collector-emitter breakdown voltage of 5.8 V. It comes in a compact 6-pin TSLP-6 surface-mount package.
✓ Total Stock: 374,720 pcs
$ Price Range: $0.17 - $0.17

BFS 460L6 E6327 Available from 1 distributor

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Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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374,720 pcs
374720 pcs On Request 1 On Request On Request 0439+ On Request On Request

BFS 460L6 E6327 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Gain
Junction Temperature
Lead Style
Mounting Type
Noise Figure (dB Typ @ f)
Operating Temperature
Power
Storage Temperature
Supplier Device Package
Transistor Type
Voltage

BFS 460L6 E6327 Description

Short technical summary and product information.

The Infineon BFS 460L6 E6327 is a dual NPN silicon RF transistor designed for low voltage, low current applications. It features two matched transistors (TR1 and TR2) each based on the BFR460L3 die. Key electrical characteristics include a transition frequency (fT) of typically 22 GHz, a collector-emitter breakdown voltage (V(BR)CEO) of 4.5 V minimum and 5.8 V typical, and a maximum collector current of 50 mA. The DC current gain (hFE) ranges from 90 to 160 at 20 mA and 3 V.

 

This transistor offers excellent RF performance with a typical noise figure of 1.1 dB at 1.8 GHz and 1.4 dB at 3 GHz. The maximum stable gain is 14.5 dB at 1.8 GHz and 10 dB at 3 GHz. The third order intercept point (IP3) is typically 28 dBm, and the 1 dB compression point is 12 dBm at 1.8 GHz. These specifications make it suitable for VCO modules and low noise amplifiers.

 

The device is housed in the world's smallest SMD 6-pin leadless package, TSLP-6-1 (6-XFDFN), with a maximum power dissipation of 200 mW at a soldering point temperature of 104°C. It is rated for operation over an ambient temperature range of -65°C to 150°C. The transistor is RoHS3 compliant and REACH unaffected, with an MSL rating of 1 (unlimited).

BFS 460L6 E6327 Quick Information

Product Type: RF Bipolar Transistor
Canonical Name: Infineon BFS460L6 NPN Silicon RF Dual Transistor
Subcategory: RF Transistor

BFS 460L6 E6327 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): MSL 1 - Unlimited
REACH Status: REACH Unaffected

BFS 460L6 E6327 Estimated Pricing

Qty Low High
15,000+ $0.17 $0.17
30,000+ $0.17 $0.17
45,000+ $0.17 $0.17

Estimated market price range - modelled values for guidance only, not live distributor offers.

BFS 460L6 E6327 Features

  • Dual NPN silicon RF transistor with 22 GHz fT.
  • Low noise figure of 1.1 dB at 1.8 GHz.
  • Maximum stable gain of 14.5 dB at 1.8 GHz.
  • Compact 6-pin TSLP-6 leadless package.
  • RoHS3 compliant and MSL 1 rated.

BFS 460L6 E6327 Applications

  • Ideal for VCO modules and low noise amplifiers.
  • Suitable for low voltage, low current RF circuits.
  • Used in wireless communication systems up to 3 GHz.

BFS 460L6 E6327 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage rating?

The maximum collector-emitter voltage (VCEO) is 4.5 V at TA > 0°C, and the collector-emitter voltage (VCES) is 15 V.

What package does the BFS 460L6 E6327 come in?

It comes in a 6-XFDFN package (TSLP-6-1) for surface mount.

What is the operating temperature range?

The ambient temperature range is -65°C to 150°C, with a maximum junction temperature of 150°C.

Is the BFS 460L6 E6327 RoHS compliant?

Yes, it is listed as RoHS3 compliant, though this is unverified.

What is the transition frequency of this transistor?

The transition frequency (fT) is typically 22 GHz, with a minimum of 16 GHz at 30 mA and 3 V.

What is the noise figure at 1.8 GHz?

The typical noise figure is 1.1 dB at 1.8 GHz and 1.4 dB at 3 GHz.

What is the DC current gain (hFE)?

The DC current gain ranges from 90 to 160, with a typical value of 120 at 20 mA and 3 V.

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