| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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374,720 pcs
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374720 pcs | On Request | 1 | On Request | On Request | 0439+ | On Request | On Request |
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The Infineon BFS 460L6 E6327 is a dual NPN silicon RF transistor designed for low voltage, low current applications. It features two matched transistors (TR1 and TR2) each based on the BFR460L3 die. Key electrical characteristics include a transition frequency (fT) of typically 22 GHz, a collector-emitter breakdown voltage (V(BR)CEO) of 4.5 V minimum and 5.8 V typical, and a maximum collector current of 50 mA. The DC current gain (hFE) ranges from 90 to 160 at 20 mA and 3 V.
This transistor offers excellent RF performance with a typical noise figure of 1.1 dB at 1.8 GHz and 1.4 dB at 3 GHz. The maximum stable gain is 14.5 dB at 1.8 GHz and 10 dB at 3 GHz. The third order intercept point (IP3) is typically 28 dBm, and the 1 dB compression point is 12 dBm at 1.8 GHz. These specifications make it suitable for VCO modules and low noise amplifiers.
The device is housed in the world's smallest SMD 6-pin leadless package, TSLP-6-1 (6-XFDFN), with a maximum power dissipation of 200 mW at a soldering point temperature of 104°C. It is rated for operation over an ambient temperature range of -65°C to 150°C. The transistor is RoHS3 compliant and REACH unaffected, with an MSL rating of 1 (unlimited).
| Qty | Low | High |
|---|---|---|
| 15,000+ | $0.17 | $0.17 |
| 30,000+ | $0.17 | $0.17 |
| 45,000+ | $0.17 | $0.17 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) is 4.5 V at TA > 0°C, and the collector-emitter voltage (VCES) is 15 V.
It comes in a 6-XFDFN package (TSLP-6-1) for surface mount.
The ambient temperature range is -65°C to 150°C, with a maximum junction temperature of 150°C.
Yes, it is listed as RoHS3 compliant, though this is unverified.
The transition frequency (fT) is typically 22 GHz, with a minimum of 16 GHz at 30 mA and 3 V.
The typical noise figure is 1.1 dB at 1.8 GHz and 1.4 dB at 3 GHz.
The DC current gain ranges from 90 to 160, with a typical value of 120 at 20 mA and 3 V.