| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
89,960 pcs
|
89960 pcs | On Request | 1 | On Request | On Request | 0506+ | On Request | On Request |
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The BFS 386L6 E6327 is a dual NPN silicon RF transistor from Infineon Technologies, designed for low voltage and low current operation. It integrates two transistors: TR1 (based on BFR360L3 die) rated for 35 mA collector current and TR2 (based on BFR380L3 die) rated for 80 mA. Both transistors have a maximum VCEO of 6V and a typical transition frequency of 14 GHz, making them suitable for RF applications up to 3.5 GHz.
Key electrical characteristics include a DC current gain (hFE) range of 60 to 200 for both transistors, low collector-base capacitance (0.3 pF for TR1, 0.5 pF for TR2), and a low noise figure of 1.0 dB for TR1 and 1.1 dB for TR2 at 1.8 GHz. The device is housed in a compact 6-XFDFN (TSLP-6-1) surface mount package, with a thermal resistance from junction to soldering point of 230 K/W for TR1 and 140 K/W for TR2.
This transistor is intended for low noise amplifier stages, oscillators, and other RF front-end circuits. It operates over a junction temperature range of -65°C to 150°C and is ESD sensitive, requiring proper handling precautions. The part is marked with code FD and has a pin configuration of 1=C1, 2=E1, 3=C2, 4=B2, 5=E2, 6=B1.
| Qty | Low | High |
|---|---|---|
| 15,000+ | $0.20 | $0.20 |
| 30,000+ | $0.19 | $0.19 |
| 45,000+ | $0.19 | $0.19 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum VCEO is 6V for both transistors.
The package is 6-XFDFN (TSLP-6-1) for surface mount.
The junction temperature maximum is 150°C, and the ambient temperature range is -65°C to 150°C.
Yes, it is listed as RoHS3 compliant, but this is unverified.
The typical transition frequency (fT) is 14 GHz for both transistors at specified test conditions.
The typical noise figure is 1.0 dB for TR1 and 1.1 dB for TR2 at 1.8 GHz.
The DC current gain (hFE) ranges from 60 minimum to 200 maximum, with a typical value of 130 for both transistors.