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BFS 360L6 E6327 The Infineon BFS360L6E6327 is a dual NPN silicon RF transistor in a TSLP-6-1 surface-mount package, designed for low-noise amplifiers and oscillators up to 3.5 GHz.
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BFS 360L6 E6327

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
The Infineon BFS360L6E6327 is a dual NPN silicon RF transistor in a TSLP-6-1 surface-mount package, designed for low-noise amplifiers and oscillators up to 3.5 GHz.
✓ Total Stock: 209,920 pcs
$ Price Range: $0.17 - $0.17

BFS 360L6 E6327 Available from 1 distributor

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✓ Non-Authorised
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Smaxon Electronics ✓
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209,920 pcs
On Request
209920 pcs On Request 1 On Request On Request 03+ On Request On Request
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BFS 360L6 E6327 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Gain
Mounting Type
Noise Figure (dB Typ @ f)
Operating Temperature
Power
Storage Temperature
Supplier Device Package
Transistor Type
Voltage
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BFS 360L6 E6327 Description

Short technical summary and product information.

The Infineon BFS360L6E6327 is a dual NPN silicon RF transistor designed for low-voltage, low-current operation. It integrates two transistors (TR1 and TR2, each die equivalent to the BFR360L3) in a compact TSLP-6-1 surface-mount package.

 

Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 6V, a maximum collector current of 35mA, and a total power dissipation of 210mW. The device features a typical transition frequency (fT) of 14GHz at 15mA and 3V, making it suitable for RF applications up to 3.5 GHz. It offers a low typical noise figure of 1.0dB at 1.8GHz and a typical maximum available gain of 14.5dB at 1.8GHz.

 

This transistor is intended for use in low-noise amplifiers and oscillators. It is housed in a leadless TSLP-6-1 package, which is suitable for surface-mount assembly. The device is rated for an ambient temperature range of -65°C to 150°C.

BFS 360L6 E6327 Quick Information

Product Type: RF Bipolar Junction Transistor (BJT)
Canonical Name: Infineon BFS360L6 NPN Silicon RF Dual Transistor
Subcategory: Dual NPN RF Transistor

BFS 360L6 E6327 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BFS 360L6 E6327 Estimated Pricing

Qty Low High
15,000+ $0.17 $0.17
30,000+ $0.17 $0.17
45,000+ $0.17 $0.17

Estimated market price range - modelled values for guidance only, not live distributor offers.

BFS 360L6 E6327 Features

  • Dual NPN silicon RF transistor design.
  • Typical transition frequency of 14GHz.
  • Low noise figure of 1.0dB at 1.8GHz.
  • Maximum collector current of 35mA.
  • Surface-mount TSLP-6-1 package.

BFS 360L6 E6327 Applications

  • Ideal for low-noise RF amplifier circuits.
  • Suitable for oscillator designs up to 3.5GHz.
  • Used in low-voltage, low-current RF applications.

BFS 360L6 E6327 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage (VCEO) for the BFS360L6?

The maximum collector-emitter voltage (VCEO) is 6V.

What is the typical transition frequency (fT) of this transistor?

The typical transition frequency (fT) is 14GHz at IC=15mA, VCE=3V, f=1GHz.

What is the package type for the BFS360L6E6327?

The package type is TSLP-6-1, which is a surface-mount package.

What is the operating temperature range for this device?

The ambient temperature range is -65°C to 150°C.

What is the typical noise figure of the BFS360L6 at 1.8GHz?

The typical noise figure is 1.0dB at IC=3mA, VCE=3V, f=1.8GHz.

What is the maximum collector current (IC) for this transistor?

The maximum collector current (IC) is 35mA.

What is the DC current gain (hFE) range for the BFS360L6?

The DC current gain (hFE) ranges from 60 minimum to 200 maximum, with a typical value of 130, at IC=15mA, VCE=3V.

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