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BFR99

The Thomson-CSF BFR99 is a PNP silicon planar epitaxial transistor in a TO-72 metal case. It is designed for wide band common-emitter linear amplifier applications up to 1GHz.

✓ Total Stock: 1 pcs

$ Price Range: $1.84

BFR99 Available from 1 distributor

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Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Partservice ✓ Non-Authorised Inventory information	1 pcs On Request	1 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

BFR99 Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	Thomson-CSF
Mounting Type	Through Hole
Power Dissipation	225 mW

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BFR99 Description

Short technical summary and product information.

The BFR99 from Thomson-CSF is a PNP silicon planar epitaxial transistor specifically engineered for wide band common-emitter linear amplifier applications up to 1GHz. It features a high transition frequency (fT) of 2 GHz at 10mA, low reverse capacitance (Cre) of 0.4 pF at 1MHz, and good cross-modulation properties with low noise.

This transistor operates with a maximum collector current of 50mA and can handle collector-emitter voltages up to -25V. Power dissipation is rated at 225mW at ambient temperature and 360mW at case temperature, both at 25°C. The operating temperature range is from -55°C to 200°C.

The BFR99 is housed in a Jedec TO-72 metal case, suitable for through-hole mounting. Its electrical characteristics include a DC current gain (hFE) ranging from 20 to 80 depending on the collector current, and a base-emitter voltage of -0.75V typical at -10mA.

Key electrical parameters include a collector cutoff current (ICBO) of -100nA at -15V, and breakdown voltages of -25V for collector-base (VCBO) and collector-emitter (VCEO), and -3V for emitter-base (VEBO).

Noise figure measurements show typical values of 2.5dB at 200MHz and 3.5dB at 800MHz for a collector current of 3mA, and 3dB at 200MHz and 4dB at 800MHz for a collector current of 10mA, with a source resistance of 50 Ohms.

BFR99 Quick Information

Product Type: Transistor

Canonical Name: BFR99 PNP Transistor

Subcategory: JFET

BFR99 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

BFR99 Estimated Pricing

Qty	Low	High
1+	$1.84	$1.84

Estimated market price range - modelled values for guidance only, not live distributor offers.

BFR99 Features

PNP silicon planar epitaxial transistor.
Designed for linear amplifier applications up to 1GHz.
High transition frequency of 2 GHz.
Low reverse capacitance of 0.4 pF.
Housed in a TO-72 metal case.

BFR99 Applications

Suitable for high-frequency linear amplifier circuits.
Used in low power switching and signal amplification.
Ideal for RF and microwave applications.
Applicable in sensor and instrumentation circuits.
Suitable for general-purpose PNP transistor applications.

BFR99 FAQs

5 frequently asked questions generated from this part’s specifications.

What is the maximum collector current for the BFR99 transistor?

The maximum collector current for the BFR99 transistor is 50 mA.

What is the collector-emitter voltage rating of the BFR99?

The collector-emitter voltage rating for the BFR99 is -25 V.

What is the transition frequency (fT) of the BFR99 transistor?

The transition frequency (fT) of the BFR99 transistor is 2 GHz at 10mA collector current and -15V collector-emitter voltage.

What is the package type for the BFR99 transistor?

The BFR99 transistor is supplied in a TO-72 metal case.

What is the operating temperature range for the BFR99 transistor?

The BFR99 transistor can operate within a temperature range of -55°C to 200°C.