| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
93,800 pcs
|
93800 pcs | On Request | 1 | On Request | On Request | 04+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Gain | |
| Mounting Type | |
| Noise Figure (dB Typ @ f) | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Transistor Type | |
| Voltage |
The BFR949TE6327 is an NPN RF bipolar transistor manufactured by Infineon Technologies. It is designed for small signal RF amplification applications.
Key electrical specifications include a maximum collector-emitter breakdown voltage of 10 V, a maximum collector current of 35 mA, and a maximum power dissipation of 250 mW. The transistor offers a typical transition frequency (ft) of 9 GHz and a typical gain of 20 dB. The noise figure is typically 1 dB to 1.5 dB over the frequency range of 1 GHz to 1.8 GHz. The DC current gain (hFE) is a minimum of 100 at Ic=5 mA and Vce=6 V.
The device is housed in a surface-mount SC-75 (SOT-416) package with a supplier device package of PG-SC-75. It is rated for operation at a junction temperature up to 150°C.
| Qty | Low | High |
|---|---|---|
| 6,000+ | $0.09 | $0.09 |
| 9,000+ | $0.09 | $0.09 |
| 15,000+ | $0.09 | $0.09 |
| 21,000+ | $0.09 | $0.09 |
| 30,000+ | $0.08 | $0.08 |
| 75,000+ | $0.08 | $0.08 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
10 V
SC-75, SOT-416
150°C
RoHS3 Compliant (unverified)
20 dB typical
1 dB to 1.5 dB typical over 1 GHz to 1.8 GHz
Minimum 100 at Ic=5 mA, Vce=6 V