| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
9,780 pcs
|
9780 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Storage Temperature |
The BFR93AW is a high-linearity RF transistor manufactured by NXP Semiconductors. It is constructed using silicon bipolar technology and is designed for applications requiring low distortion amplifiers and oscillators operating at frequencies up to 2 GHz. The transistor is suitable for collector currents ranging from 5 mA to 30 mA.
Key electrical characteristics include a collector-emitter voltage (VCEO) of 12V, a transition frequency (fT) of up to 6 GHz, and a maximum available power gain (Gma) of 15.5 dB at 900 MHz. The minimum noise figure (NFmin) is 1.5 dB at 900 MHz. The device also features a third-order intercept point (IP3) of 15 dBm at 0.9 GHz.
The BFR93AW is supplied in a SOT323 surface-mount package. It is Pb-free and halogen-free, with visible leads. The device is ESD sensitive and requires appropriate handling precautions.
This RF transistor is well-suited for various RF applications where signal integrity and low noise performance are critical. Its specifications make it a viable option for amplifier and oscillator circuits in communication systems and other RF front-end designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.24 | $0.24 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the BFR93AW is 12 V.
The transition frequency (fT) of the BFR93AW is typically 6 GHz.
The maximum available power gain (Gma) at 900 MHz for the BFR93AW is typically 15.5 dB.
The BFR93AW is supplied in a SOT323 package.
The BFR93AW is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the BFR93AW is 1 Unlimited.
The BFR93AW is REACH Unaffected.