| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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350 pcs
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350 pcs | On Request | 1 | On Request | On Request | 13/14+ | On Request | On Request |
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The BFR93AW,115 is an NPN silicon RF transistor manufactured by NXP Semiconductors, optimized for wideband operation up to 5 GHz transition frequency.
Electrical characteristics include a maximum collector-emitter voltage of 12V, collector-base voltage of 15V, and a DC collector current rating of 35mA. The transistor offers a typical DC current gain (hFE) of 90 at 30mA and 5V, with a minimum gain of 40. It provides a maximum unilateral power gain of 13 dB at 1 GHz and 8 dB at 2 GHz, and a typical noise figure of 1.5 dB at 1 GHz.
The device is housed in a surface-mount SC-70 (SOT-323) package, with gold metallization ensuring reliability. It is designed for use in RF amplifiers, mixers, and oscillators with signal frequencies up to 1 GHz. The maximum power dissipation is 300 mW at a soldering point temperature of 93°C, with a maximum junction temperature of 150°C.
The maximum VCEO is 12 V.
The typical transition frequency is 5 GHz.
It is available in an SC-70 (SOT-323) surface mount package.
The typical hFE is 90, with a minimum of 40, at Ic=30mA, Vce=5V.
RoHS status is listed as RoHS3 Compliant (unverified).