| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,789 pcs
|
2789 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,789 pcs
|
2789 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Ambient Temperature | |
| Halogen Free | |
| Junction Temperature | |
| Mounting Type | |
| SVHC Present | |
| Storage Temperature |
The Infineon BFR93AW is a high-linearity RF transistor based on silicon bipolar technology. It is engineered for use in low distortion amplifiers and oscillators operating at frequencies up to 2 GHz. This transistor is particularly well-suited for applications requiring a low noise figure and high power gain.
The BFR93AW offers a typical minimum noise figure of 1.5 dB at 900 MHz and 10.5 dB maximum available power gain at 1.8 GHz. It supports collector currents from 5 mA to 30 mA and features a transition frequency (fT) of up to 6 GHz.
Packaged in a compact SOT323 surface-mount case, the BFR93AW is designed for ease of integration into various RF circuits. It is specified with a collector-emitter voltage (VCEO) of 12 V and a maximum collector current (IC) of 90 mA. The device is also Pb-free and halogen-free, aligning with environmental compliance standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the BFR93AW is 12 V.
The transition frequency (fT) of the BFR93AW is typically 6 GHz at 30 mA collector current and 8 V collector-emitter voltage.
The minimum noise figure (NFmin) for the BFR93AW is typically 1.5 dB at 900 MHz.
The BFR93AW is supplied in a SOT323 package.
The BFR93AW is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the BFR93AW is 1 Unlimited.