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| On Request | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BFR93AR,215 is an NPN wideband transistor from NXP Semiconductors, designed for RF applications. It offers a transition frequency of 6 GHz, a maximum collector-emitter voltage of 12 V, and a maximum collector current of 35 mA. The device provides a typical noise figure of 1.9 dB at 1 GHz and a typical unilateral power gain of 13 dB at 1 GHz, making it suitable for low-noise and high-gain RF circuits.
The transistor is housed in a SOT-23 (TO-236AB) surface-mount package with three leads (emitter, base, collector). It features a low feedback capacitance of 0.6 pF, which contributes to stable high-frequency performance. The maximum total power dissipation is 300 mW at a solder point temperature of 95 °C, and the junction temperature can reach up to 175 °C.
Typical applications include RF wideband amplifiers and oscillators. The device is a PNP complement to the BFT93. The marking code is *R5, where the asterisk indicates the manufacturing origin (p for Hong Kong, w for China).
| Qty | Low | High |
|---|---|---|
| 3,000+ | $0.10 | $0.10 |
| 6,000+ | $0.10 | $0.10 |
| 9,000+ | $0.10 | $0.10 |
| 15,000+ | $0.10 | $0.10 |
| 21,000+ | $0.10 | $0.10 |
| 30,000+ | $0.09 | $0.09 |
| 75,000+ | $0.09 | $0.09 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) is 12 V.
The typical transition frequency is 6 GHz, measured at IC=30mA, VCE=5V, f=500MHz.
The BFR93AR,215 is available in a SOT-23 (TO-236AB) surface-mount package with 3 leads.
The maximum collector current is 35 mA.
The typical noise figure is 1.9 dB at 1 GHz, measured at IC=5mA, VCE=8V.
The maximum total power dissipation is 300 mW, with a solder point temperature of 95 °C.
The marking code is *R5, where the asterisk indicates the manufacturing origin (p for Hong Kong, w for China).