| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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729 pcs
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729 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BFR93A,215 is an NPN wideband transistor from NXP Semiconductors, designed for RF applications up to 6 GHz. It features a collector-emitter breakdown voltage of 12 V and a maximum collector current of 35 mA, with a total power dissipation of 300 mW at a soldering point temperature of 95°C.
The transistor provides a DC current gain (hFE) of 40 to 90 at 30 mA collector current. It has a typical transition frequency of 6 GHz at 30 mA, 5 V. The maximum unilateral power gain is 13 dB at 1 GHz and 7 dB at 2 GHz. Noise figure is typically 1.9 dB at 1 GHz and 3 dB at 2 GHz.
Housed in a SOT-23 (TO-236AB) surface mount package, the BFR93A operates over a junction temperature range up to 175°C and storage temperature from -65°C to +150°C. The thermal resistance from junction to soldering point is 260 K/W.
With its low noise figure and high power gain, this transistor is suitable for RF wideband amplifiers and oscillators. The PNP complement is BFT93.
| Qty | Low | High |
|---|---|---|
| 13+ | $2.50 | $2.50 |
| 31+ | $2.20 | $2.20 |
| 69+ | $2.00 | $2.00 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter breakdown voltage (VCEO) is 12 V.
The typical transition frequency (fT) is 6 GHz at 30 mA and 5 V.
It comes in a SOT-23 (TO-236AB) surface mount package.
The storage temperature range is -65°C to +150°C, and the maximum operating junction temperature is 175°C.
The DC current gain (hFE) is 40 to 90 at 30 mA collector current and 5 V collector-emitter voltage.
The datasheet indicates RoHS3 Compliant, but this is unverified and should be confirmed with the manufacturer.
The typical noise figure is 1.9 dB at 1 GHz with 5 mA collector current and 8 V collector-emitter voltage.