Mfr Part #:

BFR92P

Mfr Name: Infineon

The Infineon BFR92P is a low-noise silicon bipolar RF transistor designed for broadband amplifiers up to 2 GHz. It features a transition frequency of 3.5-5 GHz and is housed in a SOT23 package.

✓ Total Stock: 4,350 pcs

$ Price Range: $0.99

BFR92P Available from 2 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Xingangxin ✓ Non-Authorised Inventory information	2,250 pcs On Request	2250 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Braun Electronic Components ✓ Non-Authorised Inventory information	2,100 pcs On Request	2100 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

BFR92P Specifications Quick View

Most important parameters for selection – full specs in datasheet.

SELECT ALL

Category	New Products
Manufacturer Name	Infineon
Junction Temperature	150 °C
Lead Style	Gull Wing
SVHC Present	Not Present
Storage Temperature	-55 - 150 °C

View Similar Products (0)

BFR92P Description

Short technical summary and product information.

The Infineon BFR92P is a low-noise silicon bipolar RF transistor suitable for broadband amplifiers operating up to 2 GHz and fast non-saturated switches. It is designed for collector currents ranging from 0.5 mA to 20 mA.

Key electrical characteristics include a transition frequency (fT) between 3.5 GHz and 5 GHz at 15 mA collector current and 8 V collector-emitter voltage. The device exhibits a minimum noise figure (NFmin) of 1.4 dB at 900 MHz and 2 dB at 1.8 GHz. Maximum available power gain (Gma) is 16 dB at 900 MHz and 10.5 dB at 1.8 GHz. The transducer gain (|S21e|2) is 13 dB at 900 MHz and 7.5 dB at 1.8 MHz.

Maximum ratings include a collector-emitter voltage (VCEO) of 15 V, a collector current (IC) of 45 mA, and a total power dissipation (Ptot) of 280 mW at or below 93 °C. The junction temperature (TJ) is rated up to 150 °C, with storage temperatures ranging from -55 °C to 150 °C.

The BFR92P is supplied in a Pb-free (RoHS compliant) SOT23 package. It is an ESD-sensitive device requiring careful handling.

BFR92P Quick Information

Product Type: RF Transistor

Canonical Name: BFR92P Low Noise Silicon Bipolar RF Transistor

Subcategory: RF Transistor

BFR92P Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Lead Free: Yes

BFR92P Estimated Pricing

Qty	Low	High
1+	$0.99	$0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

BFR92P Features

Low noise silicon bipolar RF transistor.
Broadband amplifiers up to 2 GHz.
Transition frequency 3.5-5 GHz.
Minimum noise figure 1.4 dB at 900 MHz.
SOT23 package.

BFR92P Applications

Ideal for RF low-noise amplifiers.
Used in oscillator circuits up to 1.8GHz.
Suitable for wireless communication systems.
Applicable in RF front-end modules.

BFR92P FAQs

7 frequently asked questions generated from this part’s specifications.

What is the collector-emitter breakdown voltage?

The minimum collector-emitter breakdown voltage is 15V.

What is the DC current gain range?

The DC current gain (hFE) ranges from 70 to 140.

What is the transition frequency?

The transition frequency is typically 5GHz, with a minimum of 3.5GHz.

What is the package type?

The device is packaged in SOT23.

What is the maximum collector current?

The maximum collector current is 45mA.

What is the noise figure at 900 MHz?

The minimum noise figure at 900MHz is 1.4dB maximum.

What is the maximum power dissipation?

The maximum total power dissipation is 280mW at a soldering point temperature of 93°C.