| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
723,200 pcs
|
723200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Junction Temperature | |
| Mounting Type | |
| Noise Figure | |
| SVHC Present | |
| Tape & Reel | |
| Weight |
The Vishay Semiconductors BFR92AW-GS08 is a high-performance Silicon NPN Planar RF Transistor suitable for wideband amplifier applications operating up to the GHz range. This component is designed to offer high power gain, a low noise figure, and a high transition frequency, making it ideal for demanding RF circuits.
The transistor is housed in a compact SOT-323 surface-mount package, weighing approximately 6.0 mg. It operates with a collector-emitter voltage (V CEO) of 15V and a collector current (I C) of up to 30mA. The device exhibits a typical transition frequency (fT) of 6 GHz and a typical noise figure of 1.8 dB at 800 MHz.
Key electrical characteristics include a typical power gain (Gpe) of 16 dB at 800 MHz and a third-order intercept point (IP3) of 24 dBm. The component is lead (Pb)-free and compliant with RoHS 2002/95/EC and WEEE 2002/96/EC directives. Its robust design and specifications make it a reliable choice for various RF amplification tasks.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (V_CEO) is 15 V.
The typical transition frequency (fT) is 6 GHz.
The BFR92AW-GS08 is housed in a SOT-323 surface-mount package.
The maximum junction temperature is 150 °C.
The typical noise figure is 1.8 dB at 800 MHz.
The typical DC forward current transfer ratio (h_FE) is 100, with a range of 65 to 150.