| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
| On Request | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Collector-Base Voltage | |
| Collector-Emitter Voltage | |
| Emitter-Base Voltage | |
| Junction Temperature | |
| Max Power Dissipation | |
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| Power Dissipation | |
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| Tape & Reel |
The BFR91A is an NPN silicon epitaxial transistor designed for low noise amplifier applications in the VHF, UHF, and CATV frequency bands. It provides dynamic range and good current characteristics, making it a cost-effective solution for high-performance needs.
Key electrical specifications include a typical transition frequency (fT) of 6.0 GHz at 30 mA, a low noise figure (NF) of 1.6 dB at 800 MHz, and a typical power gain (GPS) of 13.0 dB at 800 MHz. The device operates with a collector-emitter breakdown voltage (VCEO) of 12 V and a maximum collector current (IC) of 50 mA.
Packaged in a SOT-37 (TO-50) surface-mount case, the BFR91A is suitable for various RF circuit designs. Its operating junction temperature range is -45 °C to +70 °C, with a maximum power dissipation of 300 mW. The transistor is supplied in bulk packaging with a standard quantity of 1000 pieces per plastic bag.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The typical transition frequency (fT) of the BFR91A is 6.0 GHz when measured at IC=30mA, VCB=5V, and f=300MHz.
The noise figure (NF) for the BFR91A is typically 1.6 dB when measured at IE=5mA, VCE=8V, and f=800MHz.
The power gain (GPS) of the BFR91A is typically 13.0 dB when measured at IE=30mA, VCE=8V, and f=800MHz.
The BFR91A transistor is supplied in a SOT-37 package.
The operating junction temperature range for the BFR91A is -45 °C to +70 °C.