| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
32 pcs
|
32 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Junction Temperature | |
| Mounting Type | |
| Termination Style |
The Telefunken BFR90A is a Silicon NPN Planar RF Transistor suitable for RF amplifier applications, particularly wideband antenna amplifiers operating up to the GHz range. It features high power gain, a low noise figure, and a high transition frequency.
Key electrical characteristics include a typical transition frequency (fT) of 6 GHz at 500 MHz, a typical noise figure (NF) of 1.8 dB at 800 MHz, and a typical power gain (Gpe) of 16 dB at 800 MHz. The transistor operates with a collector-emitter voltage (VCEO) of 15V and a collector current (IC) of up to 30mA.
Packaged in a TO-50 plastic case, the BFR90A is designed for through-hole mounting. It has a maximum total power dissipation of 300 mW at an ambient temperature of 60°C and a junction temperature of 150°C. The storage temperature range is -65°C to +150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The typical transition frequency (fT) of the BFR90A is 6 GHz at 500 MHz.
The typical noise figure (NF) for the BFR90A is 1.8 dB at 800 MHz.
The typical power gain (Gpe) for the BFR90A is 16 dB at 800 MHz.
The maximum collector current (IC) for the BFR90A is 30 mA.
The BFR90A is supplied in a TO-50 plastic case.