BFR740L3RHE6327XTSA1 RF transistor NPN SiGe:C with 4.7V Vce, 30mA Ic, 42GHz transition frequency. Features low noise figure of 0.5dB at 1.9GHz.
Mfr Part #:

BFR740L3RHE6327XTSA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
RF transistor NPN SiGe:C with 4.7V Vce, 30mA Ic, 42GHz transition frequency. Features low noise figure of 0.5dB at 1.9GHz.
✓ Total Stock: 2,000 pcs
$ Price Range: $0.36 - $0.82

BFR740L3RHE6327XTSA1 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,000 pcs
2000 pcs On Request 1 On Request On Request On Request On Request On Request

BFR740L3RHE6327XTSA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Gain
Industrial Grade
Lead Style
Mounting Type
Noise Figure (dB Typ @ f)
Operating Temperature
Power
Storage Temperature
Supplier Device Package
Tape & Reel
Transistor Type
Voltage

BFR740L3RHE6327XTSA1 Description

Short technical summary and product information.

The BFR740L3RH (ordering code BFR740L3RHE6327XTSA1) is a SiGe:C NPN RF heterojunction bipolar transistor (HBT) from Infineon Technologies. It is designed for wideband RF applications requiring low noise and high gain. The device offers a maximum collector-emitter breakdown voltage of 4.7V and a maximum collector current of 30mA, with a power dissipation of 160mW.

 

Key electrical characteristics include a typical transition frequency of 42GHz, a DC current gain (hFE) of at least 160 at 25mA, 3V, and a low noise figure of 0.5dB typical at 1.9GHz (3V, 6mA). The typical power gain is 20dB at 5.5GHz (3V, 15mA). The device is housed in a compact, surface-mount TSLP-3 package (also known as SC-101 or SOT-883) with a leadless profile.

 

This transistor is qualified for industrial applications per JEDEC47/20/22 and is suitable for wireless communications, satellite navigation systems, and ISM applications. The standard package quantity is 15,000 pieces per reel.

BFR740L3RHE6327XTSA1 Quick Information

Product Type: RF Bipolar Transistor
Series: BFR740L3RH
Canonical Name: BFR740L3RH SiGe:C NPN RF Bipolar Transistor
Subcategory: NPN SiGe:C

BFR740L3RHE6327XTSA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected

BFR740L3RHE6327XTSA1 Estimated Pricing

Qty Low High
1+ $0.82 $0.82
10+ $0.59 $0.59
25+ $0.53 $0.53
100+ $0.46 $0.46
250+ $0.43 $0.43
500+ $0.41 $0.41
1,000+ $0.40 $0.40
15,000+ $0.36 $0.36

Estimated market price range - modelled values for guidance only, not live distributor offers.

BFR740L3RHE6327XTSA1 Features

  • NPN SiGe:C RF bipolar transistor.
  • Low noise figure of 0.5 dB at 1.9 GHz.
  • High transition frequency of 42 GHz.
  • Surface mount TSLP-3 package.
  • Qualified for industrial applications.

BFR740L3RHE6327XTSA1 Applications

  • Wireless LAN 2.4 GHz and 5-6 GHz bands.
  • Satellite navigation systems (GPS, GLONASS).
  • ISM applications like RKE and Zigbee.
  • C-band LNB and satellite radio systems.

BFR740L3RHE6327XTSA1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the BFR740L3RHE6327XTSA1?

The maximum collector-emitter breakdown voltage is 4.7 V.

What is the transition frequency of this transistor?

The typical transition frequency is 42 GHz.

What is the noise figure at 1.9 GHz?

The typical noise figure is 0.5 dB at 1.9 GHz, 3 V, 6 mA.

What package type is the BFR740L3RHE6327XTSA1 available in?

It is available in a surface-mount TSLP-3 package (SC-101, SOT-883).

Is the BFR740L3RHE6327XTSA1 RoHS compliant?

Yes, it is listed as RoHS3 compliant, though this is unverified.

What is the operating temperature range?

The maximum junction temperature is 150°C.

What is the typical gain at 5.5 GHz?

The typical gain is 20 dB at 5.5 GHz, 3 V, 15 mA.

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