Mfr Part #:

BFR540

Mfr Name: Philips

The Philips BFR540 is an NPN silicon planar epitaxial transistor designed for wideband RF applications in the GHz range. It features high power gain and a low noise figure.

✓ Total Stock: 3,000 pcs

$ Price Range: $0.99

BFR540 Available from 1 distributor

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✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
OTL Components ✓ Non-Authorised Inventory information	3,000 pcs On Request	3000 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

BFR540 Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	Philips
Junction Temperature	175
Mounting Type	Surface Mount
Thermal Resistance	260

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BFR540 Description

Short technical summary and product information.

The BFR540 from Philips is an NPN silicon planar epitaxial transistor engineered for high-frequency applications, particularly in the RF frontend of wideband systems operating in the GHz range. Its design makes it suitable for cellular telephones, cordless telephones, radar detectors, satellite TV tuners, and various amplifier applications.

Key electrical characteristics include a transition frequency (fT) of 9 GHz at 40 mA collector current and 8 V collector-emitter voltage. It offers a maximum unilateral power gain (GUM) of 14 dB at 900 MHz and 13 dB insertion power gain (|S21|²) at the same frequency. The noise figure (F) is as low as 1.3 dB at 900 MHz with a 10 mA collector current.

This transistor is encapsulated in a compact SOT23 plastic envelope, suitable for surface mount applications. Gold metallization ensures excellent reliability, making it a robust choice for demanding RF designs.

Applications include analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers, and repeater amplifiers in fiber-optic systems.

BFR540 Quick Information

Product Type: RF Transistor

Canonical Name: BFR540 NPN 9 GHz Wideband Transistor

Subcategory: RF Transistor

BFR540 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

BFR540 Estimated Pricing

Qty	Low	High
1+	$0.99	$0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

BFR540 Features

NPN 9 GHz wideband transistor.
High power gain and low noise figure.
Suitable for RF frontend applications.
Encapsulated in a plastic SOT23 envelope.
Gold metallization ensures reliability.

BFR540 Applications

Used in cellular telephones.
Suitable for cordless telephones.
Ideal for radar detectors.
Applicable in satellite TV tuners.
Used in MATV/CATV amplifiers.

BFR540 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the transition frequency (fT) of the BFR540?

The typical transition frequency is 9 GHz at IC = 40 mA and VCE = 8 V.

What is the noise figure of the BFR540 at 900 MHz?

The typical noise figure is 1.3 dB at IC = 10 mA and VCE = 8 V, and 1.9 dB at IC = 40 mA.

What is the maximum collector current of the BFR540?

The maximum DC collector current is 120 mA.

What is the power dissipation capability of the BFR540?

The total power dissipation is 500 mW up to a soldering point temperature of 70 °C.

What is the package type of the BFR540?

The BFR540 is housed in a SOT23 surface-mount package.

What are the collector-emitter and collector-base breakdown voltages?

The maximum collector-emitter voltage (VCES, RBE=0) is 15 V, and the maximum collector-base voltage (VCBO, open emitter) is 20 V.

What is the typical insertion power gain at 900 MHz?

The typical insertion power gain is 13 dB at IC = 40 mA, VCE = 8 V, and 25 °C.