| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
92,840 pcs
|
92840 pcs | On Request | 1 | On Request | On Request | 04+ | On Request | On Request |
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The BFR380TE6327 is an NPN silicon RF bipolar junction transistor designed for high-frequency applications. It offers a maximum collector-emitter breakdown voltage of 9 V and a maximum collector current of 80 mA. The device provides a typical transition frequency of 14 GHz, a typical power gain of 12.5 dB, and a low noise figure of 1.1 dB at 1.8 GHz. The minimum DC current gain (hFE) is 60 at 40 mA and 3 V. Maximum power dissipation is 380 mW. The transistor is housed in a surface-mount SC-75 (SOT-416) package with a PG-SC-75 supplier device package. It is suitable for RF amplifier and oscillator circuits in wireless communications and other high-speed applications. The operating junction temperature is up to 150 °C.
| Qty | Low | High |
|---|---|---|
| 2,358+ | $0.13 | $0.13 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum junction temperature is 150 °C.
It comes in a surface mount SC-75 (SOT-416) package with supplier device package PG-SC-75.
It is listed as RoHS3 compliant, but this status is unverified.
The typical transition frequency is 14 GHz.
The typical power gain is 12.5 dB.
The typical noise figure is 1.1 dB at 1.8 GHz.
The minimum DC current gain is 60 at 40 mA and 3 V.