| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,500 pcs
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2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon BFR380F is a low-profile, linear silicon NPN RF bipolar transistor. It is part of Infineon's third-generation RF bipolar transistor family, designed for high performance in RF applications.
Key electrical characteristics include a minimum noise figure (NFmin) of 1.1 dB at 1.8 GHz (3V, 8mA) and a typical gain (Gma) of 13.5 dB at 1.8 GHz (3V, 40mA). The device also provides a typical output third-order intercept point (OIP3) of 29 dBm at 1.8 GHz (3V, 40mA). It is suitable for applications operating as high as 3.5 GHz.
This transistor is qualified for industrial applications according to JEDEC standards. Potential applications include low noise amplifiers (LNAs) for DVB-T/H, TV white space applications, and low noise, high linearity amplifiers for sub-1 GHz ISM band applications.
The BFR380F comes in a TSFP-3-1 package, designed for surface mounting. It is an ESD-sensitive device and requires appropriate handling precautions.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.24 | $0.24 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum noise figure is 1.1 dB at 1.8 GHz, 3 V, 8 mA.
The typical gain is 13.5 dB at 1.8 GHz, 3 V, 40 mA.
The typical OIP3 is 29 dBm at 1.8 GHz, 3 V, 40 mA.
The device is suitable for applications as high as 3.5 GHz.
The BFR380F is supplied in a TSFP-3-1 package.
There are 3000 pieces per reel.