| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,880 pcs
|
2880 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| FET Type | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Voltage |
The BFR30LT1G is an N-Channel JFET amplifier from On Semiconductor. It features a maximum drain-source voltage of 25V and a maximum gate-source voltage of 25V. The device offers a maximum input capacitance of 5pF at Vds=10V and a drain current of 4mA at Vds=10V.
The JFET is designed for general-purpose amplification and switching applications. It operates over a junction temperature range of -55°C to 150°C. Maximum power dissipation is 225mW on FR4 substrate and 300mW on alumina substrate, with corresponding thermal resistances of 556°C/W and 417°C/W respectively.
The device is housed in a TO-236-3 / SC-59 / SOT-23-3 surface mount package, supplied in tape and reel packaging with a standard quantity of 3000 units. The Pb-free version (G suffix) is available and verified from the datasheet.
25V.
TO-236-3, SC-59, SOT-23-3 surface mount package.
-55°C to 150°C (junction).
RoHS3 Compliant.
5 pF at Vds=10V.
225 mW.
417 °C/W.