BFR193FH6327

The Infineon BFR193FH6327 is a low noise silicon bipolar RF transistor optimized for high-gain amplifier applications up to 2 GHz. It is also suitable for linear broadband amplifiers. Key electrical characteristics include a typical transition frequency of 8 GHz (minimum 6 GHz), typical noise figure of 1 dB at 900 MHz and 1.6 dB at 1.8 GHz, and a typical transducer gain of 14.5 dB at 900 MHz and 8.5 dB at 1.8 GHz. The device offers a collector-emitter breakdown voltage of 12 V minimum, collector current rating of 80 mA, and total power dissipation of 580 mW.

The transistor is housed in a surface-mount SOT-723 package (supplier device package PG-TSFP-3-1) and is designed for compact PCB layouts. It features low collector-base capacitance (0.63 pF typical) and high linearity with a typical third order intercept point of 29 dBm at 900 MHz. The device is Pb-free (RoHS compliant) and halogen-free, with AEC-Q101 qualification available.

Typical applications include low noise RF amplifier stages, high-gain amplifiers up to 2 GHz, linear broadband amplifiers, and wireless communication front-end modules. The thermal resistance junction-to-soldering point is 135 K/W, and the junction temperature is rated up to 150°C.